InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch, T. Garrod, S. Kim, J. H. Park, J. C. Shin, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, I. Vurgaftman, J. R. Meyer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ∼2.5μm @77K.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
StatePublished - 2009
Externally publishedYes
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: Jun 2 2009Jun 4 2009

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period06/2/0906/4/09

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