@inproceedings{8abb6242bc2b413f86708346471e17ee,
title = "InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers",
abstract = "InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ∼2.5μm @77K.",
author = "J. Kirch and T. Garrod and S. Kim and Park, {J. H.} and Shin, {J. C.} and Mawst, {L. J.} and Kuech, {T. F.} and X. Song and Babcock, {S. E.} and I. Vurgaftman and Meyer, {J. R.}",
year = "2009",
language = "English",
isbn = "9781557528698",
series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",
booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",
note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",
}