InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Jeremy Kirch; Toby Garrod; Sangho Kim; Joo H. Park; Jae C. Shin; L. J. Mawst; T. F. Kuech; X. Song; S. E. Babcock; Igor Vurgaftman; Jerry R. Meyer; Tung Sheng Kuan

doi:10.1016/j.jcrysgro.2009.12.057

InAs _yP _1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Jeremy Kirch, Toby Garrod, Sangho Kim, Joo H. Park, Jae C. Shin, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, Igor Vurgaftman, Jerry R. Meyer, Tung Sheng Kuan

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm ².

Original language	English
Pages (from-to)	1165-1169
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.12.057
State	Published - Apr 1 2010
Externally published	Yes

Keywords

A3. Organometallic vapor phase epitaxy
A3. Quantum wells
B1. Antimonides
B1. Phosphides
B3. Laser diodes

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10.1016/j.jcrysgro.2009.12.057

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title = "InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers",

abstract = "The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.",

keywords = "A3. Organometallic vapor phase epitaxy, A3. Quantum wells, B1. Antimonides, B1. Phosphides, B3. Laser diodes",

author = "Jeremy Kirch and Toby Garrod and Sangho Kim and Park, {Joo H.} and Shin, {Jae C.} and Mawst, {L. J.} and Kuech, {T. F.} and X. Song and Babcock, {S. E.} and Igor Vurgaftman and Meyer, {Jerry R.} and Kuan, {Tung Sheng}",

year = "2010",

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doi = "10.1016/j.jcrysgro.2009.12.057",

language = "English",

volume = "312",

pages = "1165--1169",

journal = "Journal of Crystal Growth",

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T1 - InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

AU - Kirch, Jeremy

AU - Garrod, Toby

AU - Kim, Sangho

AU - Park, Joo H.

AU - Shin, Jae C.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - Song, X.

AU - Babcock, S. E.

AU - Vurgaftman, Igor

AU - Meyer, Jerry R.

AU - Kuan, Tung Sheng

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.

AB - The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.

KW - A3. Organometallic vapor phase epitaxy

KW - A3. Quantum wells

KW - B1. Antimonides

KW - B1. Phosphides

KW - B3. Laser diodes

UR - http://www.scopus.com/inward/record.url?scp=77949874568&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.12.057

DO - 10.1016/j.jcrysgro.2009.12.057

M3 - Article

AN - SCOPUS:77949874568

SN - 0022-0248

VL - 312

SP - 1165

EP - 1169

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 8

ER -

InAs _yP _1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Abstract

Keywords

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