In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

J. Z. Tischler; G. Eres; D. H. Lowndes; B. C. Larson; M. Yoon; T. C. Chiang; Paul Zschack

doi:10.1063/1.1291776

In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

J. Z. Tischler
, G. Eres
, D. H. Lowndes
, B. C. Larson
, M. Yoon
, T. C. Chiang
, Paul Zschack

Multiscale Modeling & Materials by Desig

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.

Original language	English
Title of host publication	Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference
Editors	Piero Pianetta, John Arthur, Sean Brennan
Publisher	American Institute of Physics Inc.
Pages	151-155
Number of pages	5
ISBN (Electronic)	1563969416, 9781563969416
DOIs	https://doi.org/10.1063/1.1291776
State	Published - Jun 6 2000
Event	11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999 - Stanford, United States Duration: Oct 13 1999 → Oct 15 1999

Publication series

Name	AIP Conference Proceedings
Volume	521
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999
Country/Territory	United States
City	Stanford
Period	10/13/99 → 10/15/99

Funding

Research sponsored by the Div. of Mat. Sci., US DOE under contract DE-AC05- 96IR22464 with Lockheed Martin ER, and US Army Research Grant DAAH04-96-1-0261. Work at UNICAT (at the Advanced Photon Source) supported by U. of 111. MRL (US DOE, State of Ill.-IBHE-HECA, & NSF), ORNL, NIST and UOP LLC. The APS is supported by the US DOE, BES, OER contract W-31-109-ENG-38. Research sponsored by the Div. of Mat. Sci., US DOE under contract DE-AC05-96IR22464 with Lockheed Martin ER, and US Army Research Grant DAAH04-96-1-0261. Work at UNICAT (at the Advanced Photon Source) supported by U. of 111. MRL (US DOE, State of Ill.-IBHE-HECA, & NSF), ORNL, NIST and UOP LLC. The APS is supported by the US DOE, BES, OER contract W-31-109-ENG-38.

Access to Document

10.1063/1.1291776

Cite this

Tischler, J. Z., Eres, G., Lowndes, D. H., Larson, B. C., Yoon, M., Chiang, T. C., & Zschack, P. (2000). In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. In P. Pianetta, J. Arthur, & S. Brennan (Eds.), Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference (pp. 151-155). (AIP Conference Proceedings; Vol. 521). American Institute of Physics Inc.. https://doi.org/10.1063/1.1291776

@inproceedings{fbf0b3ab67504a0b845b6f89be0c539a,

title = "In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies",

abstract = "Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to \textasciitilde{}1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.",

author = "Tischler, \{J. Z.\} and G. Eres and Lowndes, \{D. H.\} and Larson, \{B. C.\} and M. Yoon and Chiang, \{T. C.\} and Paul Zschack",

note = "Publisher Copyright: {\textcopyright} 2000 American Institute of Physics Inc.. All rights reserved.; 11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999 ; Conference date: 13-10-1999 Through 15-10-1999",

year = "2000",

month = jun,

day = "6",

doi = "10.1063/1.1291776",

language = "English",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

pages = "151--155",

editor = "Piero Pianetta and John Arthur and Sean Brennan",

booktitle = "Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference",

}

Tischler, JZ, Eres, G, Lowndes, DH, Larson, BC, Yoon, M, Chiang, TC & Zschack, P 2000, In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. in P Pianetta, J Arthur & S Brennan (eds), Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference. AIP Conference Proceedings, vol. 521, American Institute of Physics Inc., pp. 151-155, 11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999, Stanford, United States, 10/13/99. https://doi.org/10.1063/1.1291776

In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. / Tischler, J. Z.; Eres, G.; Lowndes, D. H. et al.
Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference. ed. / Piero Pianetta; John Arthur; Sean Brennan. American Institute of Physics Inc., 2000. p. 151-155 (AIP Conference Proceedings; Vol. 521).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

AU - Tischler, J. Z.

AU - Eres, G.

AU - Lowndes, D. H.

AU - Larson, B. C.

AU - Yoon, M.

AU - Chiang, T. C.

AU - Zschack, Paul

PY - 2000/6/6

Y1 - 2000/6/6

N2 - Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.

AB - Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.

UR - https://www.scopus.com/pages/publications/85072164878

U2 - 10.1063/1.1291776

DO - 10.1063/1.1291776

M3 - Conference contribution

AN - SCOPUS:85072164878

T3 - AIP Conference Proceedings

SP - 151

EP - 155

BT - Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference

A2 - Pianetta, Piero

A2 - Arthur, John

A2 - Brennan, Sean

PB - American Institute of Physics Inc.

T2 - 11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999

Y2 - 13 October 1999 through 15 October 1999

ER -

Tischler JZ, Eres G, Lowndes DH, Larson BC, Yoon M, Chiang TC et al. In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. In Pianetta P, Arthur J, Brennan S, editors, Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference. American Institute of Physics Inc. 2000. p. 151-155. (AIP Conference Proceedings). doi: 10.1063/1.1291776

In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

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