In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

J. Z. Tischler; G. Eres; D. H. Lowndes; B. C. Larson; M. Yoon; T. C. Chiang; Paul Zschack

doi:10.1063/1.1291776

In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

J. Z. Tischler, G. Eres, D. H. Lowndes, B. C. Larson, M. Yoon, T. C. Chiang, Paul Zschack

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.

Original language	English
Title of host publication	Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference
Editors	Piero Pianetta, John Arthur, Sean Brennan
Publisher	American Institute of Physics Inc.
Pages	151-155
Number of pages	5
ISBN (Electronic)	1563969416, 9781563969416
DOIs	https://doi.org/10.1063/1.1291776
State	Published - Jun 6 2000
Event	11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999 - Stanford, United States Duration: Oct 13 1999 → Oct 15 1999

Publication series

Name	AIP Conference Proceedings
Volume	521
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999
Country/Territory	United States
City	Stanford
Period	10/13/99 → 10/15/99

Funding

Research sponsored by the Div. of Mat. Sci., US DOE under contract DE-AC05- 96IR22464 with Lockheed Martin ER, and US Army Research Grant DAAH04-96-1-0261. Work at UNICAT (at the Advanced Photon Source) supported by U. of 111. MRL (US DOE, State of Ill.-IBHE-HECA, & NSF), ORNL, NIST and UOP LLC. The APS is supported by the US DOE, BES, OER contract W-31-109-ENG-38. Research sponsored by the Div. of Mat. Sci., US DOE under contract DE-AC05-96IR22464 with Lockheed Martin ER, and US Army Research Grant DAAH04-96-1-0261. Work at UNICAT (at the Advanced Photon Source) supported by U. of 111. MRL (US DOE, State of Ill.-IBHE-HECA, & NSF), ORNL, NIST and UOP LLC. The APS is supported by the US DOE, BES, OER contract W-31-109-ENG-38.

Funders	Funder number
U. of 111
UOP LLC
National Science Foundation
U.S. Department of Energy	DE-AC05- 96IR22464
National Institute of Standards and Technology
Lockheed Martin	DAAH04-96-1-0261
Basic Energy Sciences
Oak Ridge National Laboratory
Office of Extramural Research, National Institutes of Health	W-31-109-ENG-38

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10.1063/1.1291776

Cite this

Tischler, J. Z., Eres, G., Lowndes, D. H., Larson, B. C., Yoon, M., Chiang, T. C., & Zschack, P. (2000). In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. In P. Pianetta, J. Arthur, & S. Brennan (Eds.), Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference (pp. 151-155). (AIP Conference Proceedings; Vol. 521). American Institute of Physics Inc.. https://doi.org/10.1063/1.1291776

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abstract = "Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.",

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Tischler, JZ, Eres, G, Lowndes, DH, Larson, BC, Yoon, M, Chiang, TC & Zschack, P 2000, In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. in P Pianetta, J Arthur & S Brennan (eds), Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference. AIP Conference Proceedings, vol. 521, American Institute of Physics Inc., pp. 151-155, 11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999, Stanford, United States, 10/13/99. https://doi.org/10.1063/1.1291776

In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. / Tischler, J. Z.; Eres, G.; Lowndes, D. H. et al.
Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference. ed. / Piero Pianetta; John Arthur; Sean Brennan. American Institute of Physics Inc., 2000. p. 151-155 (AIP Conference Proceedings; Vol. 521).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tischler, J. Z.

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N2 - Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.

AB - Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ~1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiOa are presented.

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Tischler JZ, Eres G, Lowndes DH, Larson BC, Yoon M, Chiang TC et al. In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies. In Pianetta P, Arthur J, Brennan S, editors, Synchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference. American Institute of Physics Inc. 2000. p. 151-155. (AIP Conference Proceedings). doi: 10.1063/1.1291776

In situ X-ray surface diffraction chamber for pulsed laser ablation film growth studies

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