In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O 3 films

Gayoung Shin; Ho Nyung Lee; Jiseong Im; Gil Ho Gu; Sang Ho Oh

doi:10.1109/NMDC.2011.6155296

In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O ₃ films

Gayoung Shin
, Ho Nyung Lee
, Jiseong Im
, Gil Ho Gu
, Sang Ho Oh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O ₃ ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.

Original language	English
Title of host publication	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages	581-582
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2011.6155296
State	Published - 2011
Event	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of Duration: Oct 18 2011 → Oct 21 2011

Publication series

Name	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Conference

Conference	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	10/18/11 → 10/21/11

Access to Document

10.1109/NMDC.2011.6155296

Cite this

Shin, G., Lee, H. N., Im, J., Gu, G. H., & Oh, S. H. (2011). In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O ₃ films. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 (pp. 581-582). Article 6155296 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011). https://doi.org/10.1109/NMDC.2011.6155296

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title = "In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O 3 films",

abstract = "We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.",

author = "Gayoung Shin and Lee, \{Ho Nyung\} and Jiseong Im and Gu, \{Gil Ho\} and Oh, \{Sang Ho\}",

year = "2011",

doi = "10.1109/NMDC.2011.6155296",

language = "English",

isbn = "9781457721397",

series = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

pages = "581--582",

booktitle = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

note = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 ; Conference date: 18-10-2011 Through 21-10-2011",

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Shin, G, Lee, HN, Im, J, Gu, GH & Oh, SH 2011, In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O ₃ films. in 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011., 6155296, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, pp. 581-582, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, Jeju, Korea, Republic of, 10/18/11. https://doi.org/10.1109/NMDC.2011.6155296

In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O ₃ films. / Shin, Gayoung; Lee, Ho Nyung; Im, Jiseong et al.
2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 581-582 6155296 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Oh, Sang Ho

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AB - We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.

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