In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O 3 films

Gayoung Shin, Ho Nyung Lee, Jiseong Im, Gil Ho Gu, Sang Ho Oh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.

Original languageEnglish
Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages581-582
Number of pages2
DOIs
StatePublished - 2011
Event2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of
Duration: Oct 18 2011Oct 21 2011

Publication series

Name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Conference

Conference2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country/TerritoryKorea, Republic of
CityJeju
Period10/18/1110/21/11

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