TY - GEN
T1 - In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O 3 films
AU - Shin, Gayoung
AU - Lee, Ho Nyung
AU - Im, Jiseong
AU - Gu, Gil Ho
AU - Oh, Sang Ho
PY - 2011
Y1 - 2011
N2 - We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.
AB - We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.
UR - http://www.scopus.com/inward/record.url?scp=84860478664&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2011.6155296
DO - 10.1109/NMDC.2011.6155296
M3 - Conference contribution
AN - SCOPUS:84860478664
SN - 9781457721397
T3 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
SP - 581
EP - 582
BT - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
T2 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Y2 - 18 October 2011 through 21 October 2011
ER -