In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

M. I. Richard; M. J. Highland; T. T. Fister; A. Munkholm; J. Mei; S. K. Streiffer; Carol Thompson; P. H. Fuoss; G. B. Stephenson

doi:10.1063/1.3293441

In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

M. I. Richard
, M. J. Highland
, T. T. Fister
, A. Munkholm
, J. Mei
, S. K. Streiffer
, Carol Thompson
, P. H. Fuoss
, G. B. Stephenson

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In_xGa_1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.

Original language	English
Article number	051911
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3293441
State	Published - 2010
Externally published	Yes

Funding

Work at Argonne National Laboratory including use of the Advanced Photon Source and Center for Nanoscal Materials was supported by the U. S. Dept. of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

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10.1063/1.3293441

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title = "In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN",

abstract = "Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.",

author = "Richard, \{M. I.\} and Highland, \{M. J.\} and Fister, \{T. T.\} and A. Munkholm and J. Mei and Streiffer, \{S. K.\} and Carol Thompson and Fuoss, \{P. H.\} and Stephenson, \{G. B.\}",

year = "2010",

doi = "10.1063/1.3293441",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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T1 - In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

AU - Richard, M. I.

AU - Highland, M. J.

AU - Fister, T. T.

AU - Munkholm, A.

AU - Mei, J.

AU - Streiffer, S. K.

AU - Thompson, Carol

AU - Fuoss, P. H.

AU - Stephenson, G. B.

PY - 2010

Y1 - 2010

N2 - Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.

AB - Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.

UR - https://www.scopus.com/pages/publications/76449099687

U2 - 10.1063/1.3293441

DO - 10.1063/1.3293441

M3 - Article

AN - SCOPUS:76449099687

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051911

ER -

In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

Abstract

Funding

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