In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

M. I. Richard, M. J. Highland, T. T. Fister, A. Munkholm, J. Mei, S. K. Streiffer, Carol Thompson, P. H. Fuoss, G. B. Stephenson

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.

Original languageEnglish
Article number051911
JournalApplied Physics Letters
Volume96
Issue number5
DOIs
StatePublished - 2010
Externally publishedYes

Funding

Work at Argonne National Laboratory including use of the Advanced Photon Source and Center for Nanoscal Materials was supported by the U. S. Dept. of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

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