Abstract
Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
Original language | English |
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Article number | 051911 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 5 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
Funding
Work at Argonne National Laboratory including use of the Advanced Photon Source and Center for Nanoscal Materials was supported by the U. S. Dept. of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.