In situ real-time determination of the free-carrier density in doped ZnSe films during molecular beam epitaxial growth

C. M. Rouleau; R. M. Park

doi:10.1063/1.106856

In situ real-time determination of the free-carrier density in doped ZnSe films during molecular beam epitaxial growth

C. M. Rouleau, R. M. Park

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Abstract

The characteristic blue/green cathodoluminescence (CL) emission observed while analyzing doped ZnSe films using the reflection high energy electron diffraction technique during molecular beam epitaxial growth has been detected ex vacuo and its intensity has been quantified. By employing a CdS-based photoresistor mounted outside the vacuum system it has been determined for the examined case of Cl doped n-type ZnSe/GaAs films that the CL intensity varies linearly as a function of free-carrier density in the films. Specifically, log(CL intensity) was found to be proportional to log(free-electron density) over the room-temperature free-electron density range, 10¹⁷- 5×10¹⁸ cm^-3. This work demonstrates that the free-carrier density in doped ZnSe films grown by molecular beam epitaxy can be monitored in real time during growth which should significantly enhance process control.

Original language	English
Pages (from-to)	2723-2725
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	22
DOIs	https://doi.org/10.1063/1.106856
State	Published - 1992
Externally published	Yes

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title = "In situ real-time determination of the free-carrier density in doped ZnSe films during molecular beam epitaxial growth",

abstract = "The characteristic blue/green cathodoluminescence (CL) emission observed while analyzing doped ZnSe films using the reflection high energy electron diffraction technique during molecular beam epitaxial growth has been detected ex vacuo and its intensity has been quantified. By employing a CdS-based photoresistor mounted outside the vacuum system it has been determined for the examined case of Cl doped n-type ZnSe/GaAs films that the CL intensity varies linearly as a function of free-carrier density in the films. Specifically, log(CL intensity) was found to be proportional to log(free-electron density) over the room-temperature free-electron density range, 1017- 5×1018 cm-3. This work demonstrates that the free-carrier density in doped ZnSe films grown by molecular beam epitaxy can be monitored in real time during growth which should significantly enhance process control.",

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year = "1992",

doi = "10.1063/1.106856",

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journal = "Applied Physics Letters",

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AU - Rouleau, C. M.

AU - Park, R. M.

PY - 1992

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N2 - The characteristic blue/green cathodoluminescence (CL) emission observed while analyzing doped ZnSe films using the reflection high energy electron diffraction technique during molecular beam epitaxial growth has been detected ex vacuo and its intensity has been quantified. By employing a CdS-based photoresistor mounted outside the vacuum system it has been determined for the examined case of Cl doped n-type ZnSe/GaAs films that the CL intensity varies linearly as a function of free-carrier density in the films. Specifically, log(CL intensity) was found to be proportional to log(free-electron density) over the room-temperature free-electron density range, 1017- 5×1018 cm-3. This work demonstrates that the free-carrier density in doped ZnSe films grown by molecular beam epitaxy can be monitored in real time during growth which should significantly enhance process control.

AB - The characteristic blue/green cathodoluminescence (CL) emission observed while analyzing doped ZnSe films using the reflection high energy electron diffraction technique during molecular beam epitaxial growth has been detected ex vacuo and its intensity has been quantified. By employing a CdS-based photoresistor mounted outside the vacuum system it has been determined for the examined case of Cl doped n-type ZnSe/GaAs films that the CL intensity varies linearly as a function of free-carrier density in the films. Specifically, log(CL intensity) was found to be proportional to log(free-electron density) over the room-temperature free-electron density range, 1017- 5×1018 cm-3. This work demonstrates that the free-carrier density in doped ZnSe films grown by molecular beam epitaxy can be monitored in real time during growth which should significantly enhance process control.

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In situ real-time determination of the free-carrier density in doped ZnSe films during molecular beam epitaxial growth

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