@inproceedings{9505b1e922bd46b6a2c237ed21354eee,
title = "In-situ observation of selenization of Cu-Ga-In metallic precursors",
abstract = "The reaction pathway of Cu(In1-x,Gax)Se2 formation by the selenization of Cu-Ga-In/Mo/glass precursors was investigated using in-situ high-temperature X-ray diffraction (HT-XRD). The room-temperature XRD pattern shows that Cu11In9, CuIn, and pure In formed during MBEdeposition of the precursor. Selenium powder was placed in wells on the HT-XRD sample holder to provide a Se ambient during selenization. The in-situ HT-XRD observation of selenization of precursors showed that the selenization process of Cu-Ga-In/Mo/glass produces an intermediate CuSe phase in the temperature range of 260 to 370 °C The formation of CIGS is initiated at approximately 260 °C, which is close to the initial appearance of CuSe. MoSe2 formation was detected at temperature above approximately 400 °C The Ga composition (x= 0.35-0.39) of the resulting CIGS as estimated by the cell refinement method of XRD data suggests partial evaporation of indium during the temperature ramp annealing.",
author = "Kim, \{W. K.\} and Payzant, \{E. A.\} and Li, \{S. S.\} and Crisalle, \{O. D.\} and Anderson, \{T. J.\}",
year = "2006",
doi = "10.1109/WCPEC.2006.279488",
language = "English",
isbn = "1424400163",
series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
publisher = "IEEE Computer Society",
pages = "453--456",
booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",
}