In Situ Observation of Ion Migration in a Ferroelectric Ionic Conductor Rb-KTP during Thermal Annealing

Research output: Contribution to journalArticlepeer-review

Abstract

Ion exchange in Rb-doped KTiOPO4 has facilitated significant advancements in ferroelectric domain engineering, yet understanding the underlying mechanisms remains in its infancy. We perform time-of-flight secondary ion mass spectrometry analysis on multiple periodically ion-exchanged and periodically poled Rb-doped KTiOPO4 samples under different temperatures and annealing durations. The results are compared between annealing in air, which involved ex situ annealing before periodic poling, and vacuum annealing conducted in situ after periodic poling. The Rb+ diffusion profile after periodic ion exchange forms a tooth-shaped pattern. We show that in situ annealing causes a surface pinning effect on the nonpolar face, limiting Rb+ migration along the polar axis at the surface. Once the pinned layer is removed through milling, the underlying Rb+ diffusion is distinctively different from the surface. Additionally, the rate of Rb+ diffusion during in situ annealing is linear, while the periodic domain structures remain stable after annealing.

Original languageEnglish
Pages (from-to)3679-3685
Number of pages7
JournalACS Applied Electronic Materials
Volume7
Issue number9
DOIs
StatePublished - May 13 2025

Funding

This work is supported by Carl Trygger Foundation and Swedish Research Council (VR). ToF-SIMS characterization was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, using instrumentation within ORNL’s Materials Characterization Core provided by UT-Battelle, LLC under contract no. DE-AC05-00OR22725 with the U.S. Department of Energy.

Keywords

  • TOF-SIMS
  • annealing
  • domain engineering
  • ferroelectrics
  • ion exchange
  • ionic conductor
  • periodic poling

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