Abstract
A test chamber has been constructed to measure the in-situ DC electrical conductivity of ceramic thin films during ion irradiation. The films can be irradiated by three separate ion beams simultaneously with sufficient energy to pass through the films. The radiation induced conductivity of a thin (∼ 1.5 μm) Al2O3 film on tantalum was measured at ionization rates between 103 and 106 Gy/s. Radiation-induced conductivity comparable to that previously reported in bulk alumina was observed. Prolonged irradiation at elevated temperature and under an applied electric field resulted in a permanent increase in the conductance of the film. The test chamber is described and some preliminary results are given.
| Original language | English |
|---|---|
| Pages (from-to) | 169-175 |
| Number of pages | 7 |
| Journal | Journal of Nuclear Materials |
| Volume | 219 |
| DOIs | |
| State | Published - 1995 |
Funding
Research sponsored by the Division of Materials Sciences and the Office of Fusion Energy, US Department of Energy, under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems and by an appointment to the Oak Ridge National Laboratory Postdoctoral Research Program administered by the Oak Ridge Institute for Science and Education.