In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory

C. W. Allen, L. L. Funk, E. A. Ryan, A. Taylor

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

The HVEM-Tandem User Facility at Argonne National Laboratory interfaces two ion accelerators, a 2 MV tandem accelerator and a 650 kV ion implanter, to a 1.2 MV high-voltage electron microscope. This combination allows experiments involving simultaneous ion irradiation/ion implantation, electron irradiation and electron microscopy/electron diffraction to be performed. In addition the availability of a variety of microscope sample holders permits these as well as other types of in situ experiments to be performed at temperatures ranging from 10 to 1300 K, with the sample in a stressed state or with simultaneous determination of electrical resistivity of the specimen. This article summarizes the details of the Facility which are relevant to simultaneous ion beam material modification and electron microscopy, presents several current applications and briefly describes the straightforward mechanism for potential users to access this US Department of Energy-supported facility.

Original languageEnglish
Pages (from-to)553-556
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume40-41
Issue numberPART 1
DOIs
StatePublished - Apr 2 1989

Funding

* The HVEM-Tandem User Facility is supported by the US Department of Energy, Basic Energy Sciences - Materials Sciences, under Contract no. W-31-109-Eng-38.

Fingerprint

Dive into the research topics of 'In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory'. Together they form a unique fingerprint.

Cite this