Abstract
In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of α-CuInSe2 formation from Cu-In precursors during selenization. The precursor films were deposited in a migration-enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization, the formation of CuSe was observed, followed by its transformation to CuSe2 at higher temperature. The formation of α-CuInSe2 was initiated at a temperature between 250 and 300 °C. Additionally, the production of MoSe2 was clearly detected at temperatures above 440 °C. The reaction kinetics were analyzed using both the Avrami and parabolic rate models to estimate diffusion-limited activation energies of 124 (±19) and 100 (±14) kJ/mol, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 231-235 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 294 |
| Issue number | 2 |
| DOIs | |
| State | Published - Sep 4 2006 |
Funding
The authors thank Wayne Acree for EPMA characterization and Dr. Valentin Craciun for GIXD analysis at the University of Florida's Major Analytical Instrumentation Center. The authors gratefully acknowledge the financial support of DOE/NREL Thin Film PV Partnership Program under subcontract no. ADJ-2-30630-13. The authors also appreciate sponsorship, in part, by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy under Contract number DE-AC05-00OR22725.
Keywords
- A1. X-ray diffraction
- B1. Copper indium diselenide
- B3. Solar cells