In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffraction

W. K. Kim; E. A. Payzant; T. J. Anderson; O. D. Crisalle

doi:10.1016/j.tsf.2006.12.173

In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffraction

W. K. Kim, E. A. Payzant, T. J. Anderson, O. D. Crisalle

Materials Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe₂ formation from Cu-Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of CuGaSe₂ occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe₂ from selenization of Cu-Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (± 7) kJ/mol.

Original language	English
Pages (from-to)	5837-5842
Number of pages	6
Journal	Thin Solid Films
Volume	515
Issue number	15 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2006.12.173
State	Published - May 31 2007

Funding

The authors gratefully acknowledge the financial support of DOE/NREL High-Performance Photovoltaic Program, under subcontract No. XAT-4–33624–15. The authors also appreciate the sponsorship, in part, by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05–00OR22725.

Funders	Funder number
National Renewable Energy Laboratory
Office of FreedomCar
U.S. Department of Energy	DE-AC05–00OR22725
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory

Keywords

Avrami model
CuGaSe
Selenization
X-ray diffraction

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10.1016/j.tsf.2006.12.173

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title = "In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffraction",

abstract = "In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu-Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of CuGaSe2 occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu-Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (± 7) kJ/mol.",

keywords = "Avrami model, CuGaSe, Selenization, X-ray diffraction",

author = "Kim, {W. K.} and Payzant, {E. A.} and Anderson, {T. J.} and Crisalle, {O. D.}",

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doi = "10.1016/j.tsf.2006.12.173",

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T1 - In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffraction

AU - Kim, W. K.

AU - Payzant, E. A.

AU - Anderson, T. J.

AU - Crisalle, O. D.

PY - 2007/5/31

Y1 - 2007/5/31

N2 - In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu-Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of CuGaSe2 occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu-Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (± 7) kJ/mol.

AB - In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu-Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of CuGaSe2 occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu-Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (± 7) kJ/mol.

KW - Avrami model

KW - CuGaSe

KW - Selenization

KW - X-ray diffraction

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 15 SPEC. ISS.

ER -

In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffraction

Abstract

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Keywords

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