In situ growth of epitaxial Bi2Sr2CaCu 2O8-x and Bi2Sr2CuO6-x films by pulsed laser ablation

S. Zhu; D. H. Lowndes; B. C. Chakoumakos; J. D. Budai; D. K. Christen; X. Y. Zheng; E. Jones; B. Warmack

doi:10.1063/1.110008

In situ growth of epitaxial Bi₂Sr₂CaCu ₂O_8-x and Bi₂Sr₂CuO_6-x films by pulsed laser ablation

S. Zhu, D. H. Lowndes, B. C. Chakoumakos, J. D. Budai, D. K. Christen, X. Y. Zheng, E. Jones, B. Warmack

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Pulsed-laser ablation has been used to grow epitaxial films of Bi ₂Sr₂CaCu₂O_8-x (Bi-2212) and Bi ₂Sr₂CuO_6-x (Bi-2201) on (001) MgO with entirely in situ processing. The films' layer-stacking sequence, microstructure, and superconducting T_c are highly sensitive to the growth temperature and deposition rate. Pure Bi-2212 films exist over only a narrow temperature range. Pure Bi-2201 films appear at higher growth temperature, while lower growth temperature enhances the Bi-2223 phase, though it is mixed with Bi-2212. The phase homogeneity, in-plane connections among grains, and superconducting T _c of Bi-2212 grown at a given temperature are greatly improved by reducing the deposition rate. Epitaxial Bi-2212 films grown at 740°C and 0.5 Hz (∼0.05 nm/s) have T_c0 (R=0)=71 K, with J _c∼8×10⁵ A/cm² at 50 K and J _c∼5×10⁶ A/cm² at 4.2 K.

Original language	English
Pages (from-to)	409-411
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	3
DOIs	https://doi.org/10.1063/1.110008
State	Published - 1993

Access to Document

10.1063/1.110008

Cite this

@article{af0a8cfd1a9e40aea489d23b9a483006,

title = "In situ growth of epitaxial Bi2Sr2CaCu 2O8-x and Bi2Sr2CuO6-x films by pulsed laser ablation",

abstract = "Pulsed-laser ablation has been used to grow epitaxial films of Bi 2Sr2CaCu2O8-x (Bi-2212) and Bi 2Sr2CuO6-x (Bi-2201) on (001) MgO with entirely in situ processing. The films' layer-stacking sequence, microstructure, and superconducting Tc are highly sensitive to the growth temperature and deposition rate. Pure Bi-2212 films exist over only a narrow temperature range. Pure Bi-2201 films appear at higher growth temperature, while lower growth temperature enhances the Bi-2223 phase, though it is mixed with Bi-2212. The phase homogeneity, in-plane connections among grains, and superconducting T c of Bi-2212 grown at a given temperature are greatly improved by reducing the deposition rate. Epitaxial Bi-2212 films grown at 740°C and 0.5 Hz (∼0.05 nm/s) have Tc0 (R=0)=71 K, with J c∼8×105 A/cm2 at 50 K and J c∼5×106 A/cm2 at 4.2 K.",

author = "S. Zhu and Lowndes, {D. H.} and Chakoumakos, {B. C.} and Budai, {J. D.} and Christen, {D. K.} and Zheng, {X. Y.} and E. Jones and B. Warmack",

year = "1993",

doi = "10.1063/1.110008",

language = "English",

volume = "63",

pages = "409--411",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - In situ growth of epitaxial Bi2Sr2CaCu 2O8-x and Bi2Sr2CuO6-x films by pulsed laser ablation

AU - Zhu, S.

AU - Lowndes, D. H.

AU - Chakoumakos, B. C.

AU - Budai, J. D.

AU - Christen, D. K.

AU - Zheng, X. Y.

AU - Jones, E.

AU - Warmack, B.

PY - 1993

Y1 - 1993

N2 - Pulsed-laser ablation has been used to grow epitaxial films of Bi 2Sr2CaCu2O8-x (Bi-2212) and Bi 2Sr2CuO6-x (Bi-2201) on (001) MgO with entirely in situ processing. The films' layer-stacking sequence, microstructure, and superconducting Tc are highly sensitive to the growth temperature and deposition rate. Pure Bi-2212 films exist over only a narrow temperature range. Pure Bi-2201 films appear at higher growth temperature, while lower growth temperature enhances the Bi-2223 phase, though it is mixed with Bi-2212. The phase homogeneity, in-plane connections among grains, and superconducting T c of Bi-2212 grown at a given temperature are greatly improved by reducing the deposition rate. Epitaxial Bi-2212 films grown at 740°C and 0.5 Hz (∼0.05 nm/s) have Tc0 (R=0)=71 K, with J c∼8×105 A/cm2 at 50 K and J c∼5×106 A/cm2 at 4.2 K.

AB - Pulsed-laser ablation has been used to grow epitaxial films of Bi 2Sr2CaCu2O8-x (Bi-2212) and Bi 2Sr2CuO6-x (Bi-2201) on (001) MgO with entirely in situ processing. The films' layer-stacking sequence, microstructure, and superconducting Tc are highly sensitive to the growth temperature and deposition rate. Pure Bi-2212 films exist over only a narrow temperature range. Pure Bi-2201 films appear at higher growth temperature, while lower growth temperature enhances the Bi-2223 phase, though it is mixed with Bi-2212. The phase homogeneity, in-plane connections among grains, and superconducting T c of Bi-2212 grown at a given temperature are greatly improved by reducing the deposition rate. Epitaxial Bi-2212 films grown at 740°C and 0.5 Hz (∼0.05 nm/s) have Tc0 (R=0)=71 K, with J c∼8×105 A/cm2 at 50 K and J c∼5×106 A/cm2 at 4.2 K.

UR - http://www.scopus.com/inward/record.url?scp=0000040538&partnerID=8YFLogxK

U2 - 10.1063/1.110008

DO - 10.1063/1.110008

M3 - Article

AN - SCOPUS:0000040538

SN - 0003-6951

VL - 63

SP - 409

EP - 411

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

In situ growth of epitaxial Bi₂Sr₂CaCu ₂O_8-x and Bi₂Sr₂CuO_6-x films by pulsed laser ablation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this