TY - JOUR
T1 - In situ gamma radiation-induced attenuation in sapphire optical fibers heated to 1000°C
AU - Petrie, Christian M.
AU - Wilson, Brandon
AU - Blue, Thomas E.
N1 - Publisher Copyright:
© 2014 The American Ceramic Society.
PY - 2014/10/1
Y1 - 2014/10/1
N2 - The purpose of this work was to determine the suitability of using instrumentation utilizing sapphire optical fibers in a high-temperature gamma radiation environment. In this work, the broadband (500-2200 nm, or 0.56-2.48 eV) optical attenuation of commercially available sapphire optical fibers was monitored in situ during continuous gamma irradiation from room temperature up to 1000°C. The gamma dose rate of the irradiation facility was measured to be 370 rad/h (dose in sapphire). Results show rapid growth of an absorption band centered below 500 nm (the minimum detectable wavelength in this work) and extending as far as ∼1000 nm that reached a dynamic equilibrium after approximately 4 h of irradiation at room temperature. Increasing temperature generally reduced the added attenuation, although the added attenuation came to a nonzero equilibrium at temperatures of 1000°C and below. No peaks in the added attenuation were observed above 1000 nm, and the added attenuation at 1300 and 1550 nm remained less than 0.7 dB throughout the entire experiment. Fitting the attenuation spectra to Gaussian functions at each temperature revealed a large absorption band near 3 eV that monotonically decreased both in magnitude and width with increasing temperature. A second smaller band near 1.73 eV monotonically increased in both magnitude and width with increasing temperature, suggesting that some interconversion between defects may be occurring at higher temperatures.
AB - The purpose of this work was to determine the suitability of using instrumentation utilizing sapphire optical fibers in a high-temperature gamma radiation environment. In this work, the broadband (500-2200 nm, or 0.56-2.48 eV) optical attenuation of commercially available sapphire optical fibers was monitored in situ during continuous gamma irradiation from room temperature up to 1000°C. The gamma dose rate of the irradiation facility was measured to be 370 rad/h (dose in sapphire). Results show rapid growth of an absorption band centered below 500 nm (the minimum detectable wavelength in this work) and extending as far as ∼1000 nm that reached a dynamic equilibrium after approximately 4 h of irradiation at room temperature. Increasing temperature generally reduced the added attenuation, although the added attenuation came to a nonzero equilibrium at temperatures of 1000°C and below. No peaks in the added attenuation were observed above 1000 nm, and the added attenuation at 1300 and 1550 nm remained less than 0.7 dB throughout the entire experiment. Fitting the attenuation spectra to Gaussian functions at each temperature revealed a large absorption band near 3 eV that monotonically decreased both in magnitude and width with increasing temperature. A second smaller band near 1.73 eV monotonically increased in both magnitude and width with increasing temperature, suggesting that some interconversion between defects may be occurring at higher temperatures.
UR - http://www.scopus.com/inward/record.url?scp=85048330989&partnerID=8YFLogxK
U2 - 10.1111/jace.13089
DO - 10.1111/jace.13089
M3 - Article
AN - SCOPUS:85048330989
SN - 0002-7820
VL - 97
SP - 3150
EP - 3156
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 10
ER -