In-Plane Optical Anisotropy of Layered Gallium Telluride

Shengxi Huang; Yuki Tatsumi; Xi Ling; Huaihong Guo; Ziqiang Wang; Garrett Watson; Alexander A. Puretzky; David B. Geohegan; Jing Kong; Ju Li; Teng Yang; Riichiro Saito; Mildred S. Dresselhaus

doi:10.1021/acsnano.6b05002

In-Plane Optical Anisotropy of Layered Gallium Telluride

Shengxi Huang, Yuki Tatsumi, Xi Ling, Huaihong Guo, Ziqiang Wang, Garrett Watson, Alexander A. Puretzky, David B. Geohegan, Jing Kong, Ju Li, Teng Yang, Riichiro Saito, Mildred S. Dresselhaus

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

197 Scopus citations

Abstract

Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C_2h³ space group. Investigating the in-plane optical anisotropy, including the electron-photon and electron-phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. These studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.

Original language	English
Pages (from-to)	8964-8972
Number of pages	9
Journal	ACS Nano
Volume	10
Issue number	9
DOIs	https://doi.org/10.1021/acsnano.6b05002
State	Published - Sep 27 2016

Funding

S.H., X.L. and M.S.D. at MIT acknowledge National Science Foundation grant 2DARE (EFRI-1542815) for financial support. J.K. acknowledges support from U.S. Army Research Office through the MIT Institute for Soldier Nanotechnologies, under award number 023674. Microextinction measurements were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. R.S. acknowledges MEXT grant (No. 25107005). T.Y. and H.G. acknowledge the NSFC Grant (No. 51331006, U1537204) and Liaoning Shihua University Grant (2016XJJ-044) for financial support. T.Y. acknowledges China Scholarship Council for financial support.

Keywords

electron-photon interaction
group theory
light-matter interaction
optical transition selection rules
polarization-dependent Raman spectroscopy
polarization-dependent optical extinction

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10.1021/acsnano.6b05002

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abstract = "Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C2h3 space group. Investigating the in-plane optical anisotropy, including the electron-photon and electron-phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. These studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.",

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In-Plane Optical Anisotropy of Layered Gallium Telluride

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