Improving heat conduction of insulated metal substrate with thermal pyrolytic graphite core for sic power module packaging

Wei Fan, Garry Wexler, Emre Gurpinar, Burak Ozpineci

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

TPG-core IMS concept was jointly explored in this study. Integrating high thermally conductive Thermal Pyrolytic Graphite (TPG) core into Insulated Metal Substrate (IMS) is expected to simultaneously achieve high thermal conductivity from TPG and electrical functionalities from IMS. Nearly 2x thermal conductivity and 30% weight saving was demonstrated on TPG-core IMS compared to conventional Cu-core IMS. Significant junction temperature reduction (11oC) in steady state and power cycling was revealed by the thermal analysis as the result of improved thermal spreading in plane and through the thickness. The study also proved the manufacturability and compatibility of this TPG-core IMS structure to the existing IMS production and power module assembling. The integration of TPG and IMS paves a new packaging route to increase heat load, improve reliability, simplify module design and reduce assembling cost and number of steps.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2019
EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
PublisherTrans Tech Publications Ltd
Pages1022-1026
Number of pages5
ISBN (Print)9783035715798
DOIs
StatePublished - 2020
Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
Duration: Sep 29 2019Oct 4 2019

Publication series

NameMaterials Science Forum
Volume1004 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
Country/TerritoryJapan
CityKyoto
Period09/29/1910/4/19

Funding

This manuscript has been authored in part by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

FundersFunder number
DOE Public Access Plan
US Department of Energy
U.S. Department of Energy

    Keywords

    • Breakdown voltage
    • DBC
    • Dielectric
    • IMS
    • Junction temperature
    • MCPCB
    • Power module
    • SiC MOSFET
    • TPG
    • Thermal conductivity

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