Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

Patrick H. Carey; Jiancheng Yang; Fan Ren; David C. Hays; Stephen J. Pearton; Akito Kuramata; Ivan I. Kravchenko

doi:10.1116/1.4995816

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Patrick H. Carey, Jiancheng Yang, Fan Ren, David C. Hays, Stephen J. Pearton, Akito Kuramata, Ivan I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The use of ITO interlayers between Ga₂O₃ and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500-600 °C. Without the ITO, similar anneals do not lead to linear current-voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga₂O₃ stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10^-5 Ω cm² were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga₂O₃ is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

Original language	English
Article number	061201
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	6
DOIs	https://doi.org/10.1116/1.4995816
State	Published - Nov 1 2017

Funding

The project or effort depicted was also sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New

Funders	Funder number
Department of the Defense
Office of Basic Energy Sciences
U.S. Department of Energy
Defense Threat Reduction Agency	HDTRA1-17-1-011
Oak Ridge National Laboratory

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title = "Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers",

abstract = "The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500-600 °C. Without the ITO, similar anneals do not lead to linear current-voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.",

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AU - Kuramata, Akito

AU - Kravchenko, Ivan I.

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AB - The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500-600 °C. Without the ITO, similar anneals do not lead to linear current-voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

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Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

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