Improvement of off-state stress critical voltage by using pt-gated AlGaN/GaN high electron mobility transistors

Chien Fong Lo; Lu Liu; Tsung Sheng Kang; Ryan Davies; Brent P. Gila; S. J. Pearton; I. I. Kravchenko; O. Laboutin; Yu Cao; Wayne J. Johnson; Fan Ren

doi:10.1149/1.3578388

Improvement of off-state stress critical voltage by using pt-gated AlGaN/GaN high electron mobility transistors

Chien Fong Lo, Lu Liu, Tsung Sheng Kang, Ryan Davies, Brent P. Gila, S. J. Pearton, I. I. Kravchenko, O. Laboutin, Yu Cao, Wayne J. Johnson, Fan Ren

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

By replacing the commonly used Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -55 V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up -100 V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of -55 V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Original language	English
Pages (from-to)	H264-H267
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	7
DOIs	https://doi.org/10.1149/1.3578388
State	Published - 2011

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@article{10c34de36c2f41a28bd261b0ddbd33ac,

title = "Improvement of off-state stress critical voltage by using pt-gated AlGaN/GaN high electron mobility transistors",

abstract = "By replacing the commonly used Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -55 V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up -100 V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of -55 V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.",

author = "Lo, {Chien Fong} and Lu Liu and Kang, {Tsung Sheng} and Ryan Davies and Gila, {Brent P.} and Pearton, {S. J.} and Kravchenko, {I. I.} and O. Laboutin and Yu Cao and Johnson, {Wayne J.} and Fan Ren",

year = "2011",

doi = "10.1149/1.3578388",

language = "English",

volume = "14",

pages = "H264--H267",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "7",

}

TY - JOUR

T1 - Improvement of off-state stress critical voltage by using pt-gated AlGaN/GaN high electron mobility transistors

AU - Lo, Chien Fong

AU - Liu, Lu

AU - Kang, Tsung Sheng

AU - Davies, Ryan

AU - Gila, Brent P.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Laboutin, O.

AU - Cao, Yu

AU - Johnson, Wayne J.

AU - Ren, Fan

PY - 2011

Y1 - 2011

N2 - By replacing the commonly used Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -55 V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up -100 V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of -55 V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

AB - By replacing the commonly used Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -55 V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up -100 V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of -55 V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

UR - http://www.scopus.com/inward/record.url?scp=79959573613&partnerID=8YFLogxK

U2 - 10.1149/1.3578388

DO - 10.1149/1.3578388

M3 - Article

AN - SCOPUS:79959573613

SN - 1099-0062

VL - 14

SP - H264-H267

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Improvement of off-state stress critical voltage by using pt-gated AlGaN/GaN high electron mobility transistors

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