Abstract
The effect of a back gate on the dc performance of AlGaN/GaN high electron mobility transistor was investigated. The back gate was fabricated directly under the device active area by etching off the Si substrate, AlN nucleation layer, and graded AlGaN transition layer and depositing Ni/Au-based gate metal on the exposed GaN buffer layer. The reverse bias gate leakage current decreased from 3.9-×-10-5 to 1.2-×-10-5-mA/mm by applying -10-V at the back gate. Because of the suppression of gate leakage current by the back gate, the drain on/off ratio improved from 1.8-×-105 to 1.2-×-106 and the subthreshold swing from 204 to 137-mV/dec. Moreover, the drain breakdown voltage could be improved by 40% when the back gate was biased at -25-V.
Original language | English |
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Article number | 042201 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 33 |
Issue number | 4 |
DOIs | |
State | Published - Jul 1 2015 |