Improved thermal stability CrB2 contacts on ZnO

K. Ip; Rohit Khanna; D. P. Norton; S. J. Pearton; F. Ren; I. Kravchenko; C. J. Kao; G. C. Chi

doi:10.1143/JJAP.44.7291

Improved thermal stability CrB₂ contacts on ZnO

K. Ip, Rohit Khanna, D. P. Norton, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, G. C. Chi

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB2 was studied using current-voltage, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions. Under these conditions, both Zn and O were observed to outdiffuse from the ZnO. When a bilayer of Pt/Au was used on top of the CrB₂ layers, rectifying contacts with barrier heights of ∼0.4eV were obtained after annealing at 600°C, although at this condition the contact showed a reacted appearance and AES showed the onset of intermixing of the metallization. At higher anneal temperatures (700°C) the contact metallization showed blistering and loss of adhesion.

Original language	English
Pages (from-to)	7291-7295
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7291
State	Published - Oct 11 2005
Externally published	Yes

Keywords

Annealing
Contact resistance
Contacts
Metallization
ZnO

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10.1143/JJAP.44.7291

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title = "Improved thermal stability CrB2 contacts on ZnO",

abstract = "Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB2 was studied using current-voltage, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions. Under these conditions, both Zn and O were observed to outdiffuse from the ZnO. When a bilayer of Pt/Au was used on top of the CrB2 layers, rectifying contacts with barrier heights of ∼0.4eV were obtained after annealing at 600°C, although at this condition the contact showed a reacted appearance and AES showed the onset of intermixing of the metallization. At higher anneal temperatures (700°C) the contact metallization showed blistering and loss of adhesion.",

keywords = "Annealing, Contact resistance, Contacts, Metallization, ZnO",

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T1 - Improved thermal stability CrB2 contacts on ZnO

AU - Ip, K.

AU - Khanna, Rohit

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I.

AU - Kao, C. J.

AU - Chi, G. C.

PY - 2005/10/11

Y1 - 2005/10/11

N2 - Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB2 was studied using current-voltage, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions. Under these conditions, both Zn and O were observed to outdiffuse from the ZnO. When a bilayer of Pt/Au was used on top of the CrB2 layers, rectifying contacts with barrier heights of ∼0.4eV were obtained after annealing at 600°C, although at this condition the contact showed a reacted appearance and AES showed the onset of intermixing of the metallization. At higher anneal temperatures (700°C) the contact metallization showed blistering and loss of adhesion.

AB - Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB2 was studied using current-voltage, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions. Under these conditions, both Zn and O were observed to outdiffuse from the ZnO. When a bilayer of Pt/Au was used on top of the CrB2 layers, rectifying contacts with barrier heights of ∼0.4eV were obtained after annealing at 600°C, although at this condition the contact showed a reacted appearance and AES showed the onset of intermixing of the metallization. At higher anneal temperatures (700°C) the contact metallization showed blistering and loss of adhesion.

KW - Annealing

KW - Contact resistance

KW - Contacts

KW - Metallization

KW - ZnO

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DO - 10.1143/JJAP.44.7291

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JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 10

ER -

Improved thermal stability CrB₂ contacts on ZnO

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Keywords

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