Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

C. F. Lo; L. Liu; T. S. Kang; R. Davies; B. P. Gila; S. J. Pearton; I. I. Kravchenko; O. Laboutin; Y. Cao; W. J. Johnson; F. Ren

doi:10.1149/1.3629954

Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

C. F. Lo
, L. Liu
, T. S. Kang
, R. Davies
, B. P. Gila
, S. J. Pearton
, I. I. Kravchenko
, O. Laboutin
, Y. Cao
, W. J. Johnson
, F. Ren

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	63-70
Number of pages	8
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629954
State	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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10.1149/1.3629954

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Lo, C. F., Liu, L., Kang, T. S., Davies, R., Gila, B. P., Pearton, S. J., Kravchenko, I. I., Laboutin, O., Cao, Y., Johnson, W. J., & Ren, F. (2011). Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 63-70). (ECS Transactions; Vol. 41, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629954

@inproceedings{d2c90fe6d4684c52ba4fa2ca07d51391,

title = "Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization",

abstract = "The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.",

author = "Lo, \{C. F.\} and L. Liu and Kang, \{T. S.\} and R. Davies and Gila, \{B. P.\} and Pearton, \{S. J.\} and Kravchenko, \{I. I.\} and O. Laboutin and Y. Cao and Johnson, \{W. J.\} and F. Ren",

year = "2011",

doi = "10.1149/1.3629954",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "63--70",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Lo, CF, Liu, L, Kang, TS, Davies, R, Gila, BP, Pearton, SJ, Kravchenko, II, Laboutin, O, Cao, Y, Johnson, WJ & Ren, F 2011, Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 63-70, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629954

Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization. / Lo, C. F.; Liu, L.; Kang, T. S. et al.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. Electrochemical Society Inc., 2011. p. 63-70 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

AU - Lo, C. F.

AU - Liu, L.

AU - Kang, T. S.

AU - Davies, R.

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Laboutin, O.

AU - Cao, Y.

AU - Johnson, W. J.

AU - Ren, F.

PY - 2011

Y1 - 2011

N2 - The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

AB - The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

UR - https://www.scopus.com/pages/publications/84863157669

U2 - 10.1149/1.3629954

DO - 10.1149/1.3629954

M3 - Conference contribution

AN - SCOPUS:84863157669

SN - 9781566779067

T3 - ECS Transactions

SP - 63

EP - 70

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

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