Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

C. F. Lo; L. Liu; T. S. Kang; R. Davies; B. P. Gila; S. J. Pearton; I. I. Kravchenko; O. Laboutin; Y. Cao; W. J. Johnson; F. Ren

doi:10.1149/1.3629954

Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

C. F. Lo, L. Liu, T. S. Kang, R. Davies, B. P. Gila, S. J. Pearton, I. I. Kravchenko, O. Laboutin, Y. Cao, W. J. Johnson, F. Ren

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	63-70
Number of pages	8
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629954
State	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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10.1149/1.3629954

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Lo, C. F., Liu, L., Kang, T. S., Davies, R., Gila, B. P., Pearton, S. J., Kravchenko, I. I., Laboutin, O., Cao, Y., Johnson, W. J., & Ren, F. (2011). Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 63-70). (ECS Transactions; Vol. 41, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629954

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title = "Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization",

abstract = "The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.",

author = "Lo, {C. F.} and L. Liu and Kang, {T. S.} and R. Davies and Gila, {B. P.} and Pearton, {S. J.} and Kravchenko, {I. I.} and O. Laboutin and Y. Cao and Johnson, {W. J.} and F. Ren",

year = "2011",

doi = "10.1149/1.3629954",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "63--70",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Lo, CF, Liu, L, Kang, TS, Davies, R, Gila, BP, Pearton, SJ, Kravchenko, II, Laboutin, O, Cao, Y, Johnson, WJ & Ren, F 2011, Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 63-70, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629954

Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization. / Lo, C. F.; Liu, L.; Kang, T. S. et al.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. Electrochemical Society Inc., 2011. p. 63-70 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

AU - Lo, C. F.

AU - Liu, L.

AU - Kang, T. S.

AU - Davies, R.

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Laboutin, O.

AU - Cao, Y.

AU - Johnson, W. J.

AU - Ren, F.

PY - 2011

Y1 - 2011

N2 - The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

AB - The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

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U2 - 10.1149/1.3629954

DO - 10.1149/1.3629954

M3 - Conference contribution

AN - SCOPUS:84863157669

SN - 9781566779067

T3 - ECS Transactions

SP - 63

EP - 70

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Improved off-state stress critical voltage on AlGaN/GaN high electron mobility transistors utilizing Pt/Ti/Au based gate metallization

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