Important failure mechanism in MOCVD (Ba,Sr)TiO3 thin films: resistance degradation

C. Basceri; S. E. Lash; C. B. Parker; S. K. Streiffer; A. I. Kingon; M. Grossmann; S. Hoffmann; M. Schumacher; R. Waser; S. Bilodeau; R. Carl; P. C. Van Buskirk; S. R. Summerfelt

Important failure mechanism in MOCVD (Ba,Sr)TiO₃ thin films: resistance degradation

C. Basceri
, S. E. Lash
, C. B. Parker
, S. K. Streiffer
, A. I. Kingon
, M. Grossmann
, S. Hoffmann
, M. Schumacher
, R. Waser
, S. Bilodeau
, R. Carl
, P. C. Van Buskirk
, S. R. Summerfelt

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO₃ thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	493
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 2 1997

Cite this

@article{5fc6617fa1f84a128ecafcf394783dea,

title = "Important failure mechanism in MOCVD (Ba,Sr)TiO3 thin films: resistance degradation",

abstract = "We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at\%Ti, and then decreases with higher at\%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.",

author = "C. Basceri and Lash, \{S. E.\} and Parker, \{C. B.\} and Streiffer, \{S. K.\} and Kingon, \{A. I.\} and M. Grossmann and S. Hoffmann and M. Schumacher and R. Waser and S. Bilodeau and R. Carl and \{Van Buskirk\}, \{P. C.\} and Summerfelt, \{S. R.\}",

year = "1998",

language = "English",

volume = "493",

pages = "9--14",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 01-12-1997 Through 02-12-1997",

}

TY - JOUR

T1 - Important failure mechanism in MOCVD (Ba,Sr)TiO3 thin films

T2 - Proceedings of the 1997 MRS Fall Symposium

AU - Basceri, C.

AU - Lash, S. E.

AU - Parker, C. B.

AU - Streiffer, S. K.

AU - Kingon, A. I.

AU - Grossmann, M.

AU - Hoffmann, S.

AU - Schumacher, M.

AU - Waser, R.

AU - Bilodeau, S.

AU - Carl, R.

AU - Van Buskirk, P. C.

AU - Summerfelt, S. R.

PY - 1998

Y1 - 1998

N2 - We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

AB - We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

UR - https://www.scopus.com/pages/publications/0031701705

M3 - Conference article

AN - SCOPUS:0031701705

SN - 0272-9172

VL - 493

SP - 9

EP - 14

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 1 December 1997 through 2 December 1997

ER -

Important failure mechanism in MOCVD (Ba,Sr)TiO₃ thin films: resistance degradation

Abstract

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