Important failure mechanism in MOCVD (Ba,Sr)TiO3 thin films: resistance degradation

C. Basceri; S. E. Lash; C. B. Parker; S. K. Streiffer; A. I. Kingon; M. Grossmann; S. Hoffmann; M. Schumacher; R. Waser; S. Bilodeau; R. Carl; P. C. Van Buskirk; S. R. Summerfelt

Important failure mechanism in MOCVD (Ba,Sr)TiO₃ thin films: resistance degradation

C. Basceri, S. E. Lash, C. B. Parker, S. K. Streiffer, A. I. Kingon, M. Grossmann, S. Hoffmann, M. Schumacher, R. Waser, S. Bilodeau, R. Carl, P. C. Van Buskirk, S. R. Summerfelt

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO₃ thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	493
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 2 1997

Cite this

@article{5fc6617fa1f84a128ecafcf394783dea,

title = "Important failure mechanism in MOCVD (Ba,Sr)TiO3 thin films: resistance degradation",

abstract = "We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.",

author = "C. Basceri and Lash, {S. E.} and Parker, {C. B.} and Streiffer, {S. K.} and Kingon, {A. I.} and M. Grossmann and S. Hoffmann and M. Schumacher and R. Waser and S. Bilodeau and R. Carl and {Van Buskirk}, {P. C.} and Summerfelt, {S. R.}",

year = "1998",

language = "English",

volume = "493",

pages = "9--14",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 01-12-1997 Through 02-12-1997",

}

TY - JOUR

T1 - Important failure mechanism in MOCVD (Ba,Sr)TiO3 thin films

T2 - Proceedings of the 1997 MRS Fall Symposium

AU - Basceri, C.

AU - Lash, S. E.

AU - Parker, C. B.

AU - Streiffer, S. K.

AU - Kingon, A. I.

AU - Grossmann, M.

AU - Hoffmann, S.

AU - Schumacher, M.

AU - Waser, R.

AU - Bilodeau, S.

AU - Carl, R.

AU - Van Buskirk, P. C.

AU - Summerfelt, S. R.

PY - 1998

Y1 - 1998

N2 - We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

AB - We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

UR - http://www.scopus.com/inward/record.url?scp=0031701705&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031701705

SN - 0272-9172

VL - 493

SP - 9

EP - 14

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 1 December 1997 through 2 December 1997

ER -

Important failure mechanism in MOCVD (Ba,Sr)TiO₃ thin films: resistance degradation

Abstract

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