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Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films

  • T. R. Taylor
  • , P. J. Hansen
  • , B. Acikel
  • , N. Pervez
  • , R. A. York
  • , S. K. Streiffer
  • , J. S. Speck

Research output: Contribution to journalArticlepeer-review

154 Scopus citations

Abstract

Barium strontium titanate thin films were deposited by sputtering on Pt/SiO2 structures using five different host substrates: magnesium oxide, strontium titanate, sapphire, silicon, and vycor glass. These substrates were chosen to provide a systematic change in thermal strain while maintaining the same film microstructure. All films have a weakly textured microstructure. Temperature dependent dielectric measurements from 100-500 K determined that decreasing thermal expansion coefficient of the host substrate (i.e., larger tensile thermal strain) reduced the film dielectric permittivity. The experimentally determined Curie-Weiss temperature decreased with increasing tensile thermal strain and the Curie-Weiss constant increased with tensile strain as predicted by Pertsev et al. [J. Appl. Phys. 85, 1698 (1999)].

Original languageEnglish
Pages (from-to)1978-1980
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number11
DOIs
StatePublished - Mar 18 2002
Externally publishedYes

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