Impact of SiC power electronic devices for hybrid electric vehicles

Leon M. Tolbert; Burak Ozpineci; Syed K. Islam; Fang Z. Peng

doi:10.4271/2002-01-1904

Impact of SiC power electronic devices for hybrid electric vehicles

Leon M. Tolbert, Burak Ozpineci, Syed K. Islam, Fang Z. Peng

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expected performance characteristics of the various semiconductor devices and the impact that these devices could have in applications are not well understood. Simulation tools have been developed and are demonstrated for SiC devices in relevant transportation applications. These tools have been verified by experimental analysis of SiC diodes and MOSFETs and can be used to assess the impact of expected performance gains in SiC devices and determine areas of greatest impact in HEV systems.

Original language	English
Journal	SAE Technical Papers
DOIs	https://doi.org/10.4271/2002-01-1904
State	Published - 2002
Externally published	Yes
Event	2002 Future Car Congress - Arlington, VA, United States Duration: Jun 3 2002 → Jun 5 2002

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10.4271/2002-01-1904

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@article{d62ade2ac3ff457abd2cb9247239f28f,

title = "Impact of SiC power electronic devices for hybrid electric vehicles",

abstract = "The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expected performance characteristics of the various semiconductor devices and the impact that these devices could have in applications are not well understood. Simulation tools have been developed and are demonstrated for SiC devices in relevant transportation applications. These tools have been verified by experimental analysis of SiC diodes and MOSFETs and can be used to assess the impact of expected performance gains in SiC devices and determine areas of greatest impact in HEV systems.",

author = "Tolbert, {Leon M.} and Burak Ozpineci and Islam, {Syed K.} and Peng, {Fang Z.}",

year = "2002",

doi = "10.4271/2002-01-1904",

language = "English",

journal = "SAE Technical Papers",

issn = "0148-7191",

publisher = "SAE International",

note = "2002 Future Car Congress ; Conference date: 03-06-2002 Through 05-06-2002",

}

TY - JOUR

T1 - Impact of SiC power electronic devices for hybrid electric vehicles

AU - Tolbert, Leon M.

AU - Ozpineci, Burak

AU - Islam, Syed K.

AU - Peng, Fang Z.

PY - 2002

Y1 - 2002

N2 - The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expected performance characteristics of the various semiconductor devices and the impact that these devices could have in applications are not well understood. Simulation tools have been developed and are demonstrated for SiC devices in relevant transportation applications. These tools have been verified by experimental analysis of SiC diodes and MOSFETs and can be used to assess the impact of expected performance gains in SiC devices and determine areas of greatest impact in HEV systems.

AB - The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expected performance characteristics of the various semiconductor devices and the impact that these devices could have in applications are not well understood. Simulation tools have been developed and are demonstrated for SiC devices in relevant transportation applications. These tools have been verified by experimental analysis of SiC diodes and MOSFETs and can be used to assess the impact of expected performance gains in SiC devices and determine areas of greatest impact in HEV systems.

UR - http://www.scopus.com/inward/record.url?scp=85072454396&partnerID=8YFLogxK

U2 - 10.4271/2002-01-1904

DO - 10.4271/2002-01-1904

M3 - Conference article

AN - SCOPUS:85072454396

SN - 0148-7191

JO - SAE Technical Papers

JF - SAE Technical Papers

T2 - 2002 Future Car Congress

Y2 - 3 June 2002 through 5 June 2002

ER -

Impact of SiC power electronic devices for hybrid electric vehicles

Abstract

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