Impact of gate geometry on ionic liquid gated ionotronic systems

A. T. Wong; J. H. Noh; P. R. Pudasaini; B. Wolf; N. Balke; A. Herklotz; Y. Sharma; A. V. Haglund; S. Dai; D. Mandrus; P. D. Rack; T. Z. Ward

doi:10.1063/1.4974485

Impact of gate geometry on ionic liquid gated ionotronic systems

A. T. Wong, J. H. Noh, P. R. Pudasaini, B. Wolf, N. Balke, A. Herklotz, Y. Sharma, A. V. Haglund, S. Dai, D. Mandrus, P. D. Rack, T. Z. Ward

Chemical Sciences Division

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard "side gate" 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. These findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

Original language	English
Article number	042501
Journal	APL Materials
Volume	5
Issue number	4
DOIs	https://doi.org/10.1063/1.4974485
State	Published - Apr 1 2017

Funding

P.D.R. and B.W. acknowledge support for the a-IGZO thin film transistor device which was supported by NSF CPS No. 1544686. J.H.N. acknowledges support by the U.S. Department of Energy (DOE) under Grant No. DOE DE-SC0002136. A.V.H. acknowledges support from the UT JDRD program. A.T.W., A.H., Y.S., S.D., and T.Z.W. acknowledge support by Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy. D.M. and P.R.P acknowledge support from the Gordon and Betty Moore Foundation's EPiQS Initiative through Grant GBMF4416. N.B. acknowledges funding by the Division of Materials Sciences and Engineering, Basic Energy Sciences, Department of Energy. Some measurements and device synthesis were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

Funders	Funder number
DOE Office of Science
NSF CPS
UT JDRD
National Science Foundation	1544686
U.S. Department of Energy	DOE DE-SC0002136
Gordon and Betty Moore Foundation	GBMF4416
Basic Energy Sciences
Oak Ridge National Laboratory
Laboratory Directed Research and Development
Division of Materials Sciences and Engineering

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@article{184a176e8f314262aa665a5cf197bc12,

title = "Impact of gate geometry on ionic liquid gated ionotronic systems",

abstract = "Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard {"}side gate{"} 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. These findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.",

author = "Wong, {A. T.} and Noh, {J. H.} and Pudasaini, {P. R.} and B. Wolf and N. Balke and A. Herklotz and Y. Sharma and Haglund, {A. V.} and S. Dai and D. Mandrus and Rack, {P. D.} and Ward, {T. Z.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = apr,

day = "1",

doi = "10.1063/1.4974485",

language = "English",

volume = "5",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Impact of gate geometry on ionic liquid gated ionotronic systems

AU - Wong, A. T.

AU - Noh, J. H.

AU - Pudasaini, P. R.

AU - Wolf, B.

AU - Balke, N.

AU - Herklotz, A.

AU - Sharma, Y.

AU - Haglund, A. V.

AU - Dai, S.

AU - Mandrus, D.

AU - Rack, P. D.

AU - Ward, T. Z.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard "side gate" 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. These findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

AB - Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard "side gate" 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. These findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

UR - http://www.scopus.com/inward/record.url?scp=85010402885&partnerID=8YFLogxK

U2 - 10.1063/1.4974485

DO - 10.1063/1.4974485

M3 - Article

AN - SCOPUS:85010402885

SN - 2166-532X

VL - 5

JO - APL Materials

JF - APL Materials

IS - 4

M1 - 042501

ER -

Impact of gate geometry on ionic liquid gated ionotronic systems

Abstract

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