IGBT gate driver upgrades to the HVCM at the SNS

Dennis J. Solley, David E. Anderson, Gunjan P. Patel, Vladimir V. Peplov, Robert Saethre, Mark W. Wezensky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The SNS at ORNL has been fully operational since 2006 and in September 2009, the design goal of 1 MW of sustained beam power on target was achieved. Historically, the high voltage converter modulators (HVCM) have been a known problem area and, in order to reach another SNS milestone of 90% availability, a new gate driver was one of several areas targeted to improve the overall reliability of the HVCM systems. The drive capability and fault protection of the large IGBT modules in the HVCM were specifically addressed to improve IGBT switching characteristics and provide enhanced troubleshooting and monitoring capabilities for the critical IGBT/driver pair. This paper outlines the work involved; the result obtained and documents the driver's long-term performance. Enhanced features, designed to be used in conjunction with a new controller presently under development, will also be discussed.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Pages358-361
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 - San Diego, CA, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameProceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012

Conference

Conference2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Country/TerritoryUnited States
CitySan Diego, CA
Period06/3/1206/7/12

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