Abstract
The exposure of the miscut Si(001) surface to H gives rise to a rich sequence of stable step structures as a function of the H chemical potential. First-principles calculations of step-formation energies show that the formation of steps on the (2 × 1) reconstructed surface requires energy, but that on the (1 × 1) surface, steps form exothermically. This explains surface roughness at high H chemical potentials.
| Original language | English |
|---|---|
| Article number | 125316 |
| Pages (from-to) | 1253161-1253165 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 63 |
| Issue number | 12 |
| DOIs | |
| State | Published - 2001 |
| Externally published | Yes |
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