Abstract
In 2D noble metals like copper, the carrier scattering at grain boundaries has obscured the intrinsic nature of electronic transport. However, it is demonstrated that the intrinsic nature of transport by hole carriers in 2D copper can be revealed by growing thin films without grain boundaries. As even a slight deviation from the twin boundary is perceived as grain boundaries by electrons, it is only through the thorough elimination of grain boundaries that the hidden hole-like attribute of 2D single-crystal copper can be unmasked. Two types of Fermi surfaces, a large hexagonal Fermi surface centered at the zone center and the triangular Fermi surface around the zone corner, tightly matching to the calculated Fermi surface topology, confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and vivid nonlinear Hall effects of the 2D single-crystal copper account for the presence of hole carriers experimentally. This breakthrough suggests the potential to manipulate the majority carrier polarity in metals by means of grain boundary engineering in a 2D geometry.
| Original language | English |
|---|---|
| Article number | 2403783 |
| Journal | Advanced Materials |
| Volume | 36 |
| Issue number | 36 |
| DOIs | |
| State | Published - Sep 5 2024 |
| Externally published | Yes |
Funding
J.M.O., K.K., and J.H. contributed equally to this work. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (Grant Nos. RS‐2024‐00340377, NRF‐2021R1A2C1013119, and NRF‐2021R1A5A1032937), a Korea Basic Science Institute (National Research Facilities and Equipment Center) grant funded by the Ministry of Education (Grant No. 2021R1A6C101A429), a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (RS‐2023‐00210295), BrainLink program funded by the Ministry of Science and ICT through the National Research Foundation of Korea (Grant No. 2022H1D3A3A01077468), National Measurement Standard Services and Technical Services for SME funded by Korea research Institute of Standards and Science (Grant No. KRISS‐2022‐GP2022‐0014), and the Samsung Science and Technology Foundation under Project Number SRFC‐MA2202‐02. Use of the ALS, Lawrence Berkeley National Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contracts No. DE‐AC02‐05CH11231.
Keywords
- grain boundary free
- hole carriers in Cu
- nonlinear Hall effect
- single-crystal copper thin film
- triangular hole orbit