Highly strained InAs quantum wells on InP substrates for mid-IR emission

Sangho Kim; Jeremy Kirch; Luke Mawst

doi:10.1016/j.jcrysgro.2009.12.003

Highly strained InAs quantum wells on InP substrates for mid-IR emission

Sangho Kim, Jeremy Kirch, Luke Mawst

University of Wisconsin-Madison

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (<500 °C) and tertiarybutylarsine (TBA) and/or arsine precursors were applied for this study. Several growth parameters such as growth temperature, growth rate, interruption time between growths of layers, and mixture of group V precursors were investigated. It was found that relatively high growth rate of InAs (0.3 nm/s) and a mixture flow of TBA and AsH₃, allowed growth of up to 9 nm thick InAs quantum wells without significant strain relaxation. Photoluminescence (PL) wavelengths of 2.52 μm were observed at room temperature (RT) from a 9 nm InAs double quantum well (DQW) in a separate confinement hetero-structure (SCH) structure.

Original language	English
Pages (from-to)	1388-1390
Number of pages	3
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.12.003
State	Published - Apr 1 2010
Externally published	Yes

Keywords

A1. High-resolution X-ray diffraction
A1. Strain
A3. Organometallic vapor phase epitaxy
B1. InAs
B1. TBA
B2. Semiconductor III-V materials

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10.1016/j.jcrysgro.2009.12.003

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title = "Highly strained InAs quantum wells on InP substrates for mid-IR emission",

abstract = "Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (<500 °C) and tertiarybutylarsine (TBA) and/or arsine precursors were applied for this study. Several growth parameters such as growth temperature, growth rate, interruption time between growths of layers, and mixture of group V precursors were investigated. It was found that relatively high growth rate of InAs (0.3 nm/s) and a mixture flow of TBA and AsH3, allowed growth of up to 9 nm thick InAs quantum wells without significant strain relaxation. Photoluminescence (PL) wavelengths of 2.52 μm were observed at room temperature (RT) from a 9 nm InAs double quantum well (DQW) in a separate confinement hetero-structure (SCH) structure.",

keywords = "A1. High-resolution X-ray diffraction, A1. Strain, A3. Organometallic vapor phase epitaxy, B1. InAs, B1. TBA, B2. Semiconductor III-V materials",

author = "Sangho Kim and Jeremy Kirch and Luke Mawst",

year = "2010",

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doi = "10.1016/j.jcrysgro.2009.12.003",

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pages = "1388--1390",

journal = "Journal of Crystal Growth",

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T1 - Highly strained InAs quantum wells on InP substrates for mid-IR emission

AU - Kim, Sangho

AU - Kirch, Jeremy

AU - Mawst, Luke

PY - 2010/4/1

Y1 - 2010/4/1

N2 - Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (<500 °C) and tertiarybutylarsine (TBA) and/or arsine precursors were applied for this study. Several growth parameters such as growth temperature, growth rate, interruption time between growths of layers, and mixture of group V precursors were investigated. It was found that relatively high growth rate of InAs (0.3 nm/s) and a mixture flow of TBA and AsH3, allowed growth of up to 9 nm thick InAs quantum wells without significant strain relaxation. Photoluminescence (PL) wavelengths of 2.52 μm were observed at room temperature (RT) from a 9 nm InAs double quantum well (DQW) in a separate confinement hetero-structure (SCH) structure.

AB - Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (<500 °C) and tertiarybutylarsine (TBA) and/or arsine precursors were applied for this study. Several growth parameters such as growth temperature, growth rate, interruption time between growths of layers, and mixture of group V precursors were investigated. It was found that relatively high growth rate of InAs (0.3 nm/s) and a mixture flow of TBA and AsH3, allowed growth of up to 9 nm thick InAs quantum wells without significant strain relaxation. Photoluminescence (PL) wavelengths of 2.52 μm were observed at room temperature (RT) from a 9 nm InAs double quantum well (DQW) in a separate confinement hetero-structure (SCH) structure.

KW - A1. High-resolution X-ray diffraction

KW - A1. Strain

KW - A3. Organometallic vapor phase epitaxy

KW - B1. InAs

KW - B1. TBA

KW - B2. Semiconductor III-V materials

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U2 - 10.1016/j.jcrysgro.2009.12.003

DO - 10.1016/j.jcrysgro.2009.12.003

M3 - Article

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SN - 0022-0248

VL - 312

SP - 1388

EP - 1390

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 8

ER -

Highly strained InAs quantum wells on InP substrates for mid-IR emission

Abstract

Keywords

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