Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

Seunghun Kang; Woo Sung Jang; Anna N. Morozovska; Owoong Kwon; Yeongrok Jin; Young Hoon Kim; Hagyoul Bae; Chenxi Wang; Sang Hyeok Yang; Alex Belianinov; Steven Randolph; Eugene A. Eliseev; Liam Collins; Yeehyun Park; Sanghyun Jo; Min Hyoung Jung; Kyoung June Go; Hae Won Cho; Si Young Choi; Jae Hyuck Jang; Sunkook Kim; Hu Young Jeong; Jaekwang Lee; Olga S. Ovchinnikova; Jinseong Heo; Sergei V. Kalinin; Young Min Kim; Yunseok Kim

doi:10.1126/science.abk3195

Highly enhanced ferroelectricity in HfO₂-based ferroelectric thin film by light ion bombardment

Seunghun Kang
, Woo Sung Jang
, Anna N. Morozovska
, Owoong Kwon
, Yeongrok Jin
, Young Hoon Kim
, Hagyoul Bae
, Chenxi Wang
, Sang Hyeok Yang
, Alex Belianinov
, Steven Randolph
, Eugene A. Eliseev
, Liam Collins
, Yeehyun Park
, Sanghyun Jo
, Min Hyoung Jung
, Kyoung June Go
, Hae Won Cho
, Si Young Choi
, Jae Hyuck Jang

Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo, Sergei V. Kalinin, Young Min Kim, Yunseok Kim

Functional Atomic Force Microscopy Group

Research output: Contribution to journal › Article › peer-review

184 Scopus citations

Abstract

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO₂)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO₂ are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

Original language	English
Article number	376
Journal	Science
Volume	376
Issue number	6594
DOIs	https://doi.org/10.1126/science.abk3195
State	Published - May 13 2022

Funding

This work was supported by the National Research Foundation of Korea (NRF) funded by the Korean government (MSIT) (grant nos. 2021R1A2C2009642, 2020R1F1A1072355, and 2020R1A2C1006207). This work was also supported by the Samsung Advanced Institute of Technology, Samsung Electronics, in Korea. The work of A.N.M. is supported by the National Academy of Sciences of Ukraine (grant no. 1230) and the European Union’s Horizon 2020 research and innovation programme under Marie Skłodowska-Curie grant agreement no. 778070. A portion of the work, including He ion exposure, AFM measurements, and data analysis, was conducted at the Center for Nanophase Materials Sciences, which is a US Department of Energy Office of Science User Facility (CNMS2018-219; CNMS2021-B-00917, CNMS2022-R-01082). J.L acknowledges the support of the Korea Basic Science Institute (National Research Facilities and Equipment Center) through a grant funded by the Ministry of Education (no. 2021R1A6C101A429). S.-Y.C. acknowledges the support of the Global Frontier Hybrid Interface Materials of the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2013M3A6B1078872). The use of the TEM instrument (ARM300F) was supported by Advanced Facility Cente for Quantum Technology at SKKU.

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Kang, S., Jang, W. S., Morozovska, A. N., Kwon, O., Jin, Y., Kim, Y. H., Bae, H., Wang, C., Yang, S. H., Belianinov, A., Randolph, S., Eliseev, E. A., Collins, L., Park, Y., Jo, S., Jung, M. H., Go, K. J., Cho, H. W., Choi, S. Y., ... Kim, Y. (2022). Highly enhanced ferroelectricity in HfO₂-based ferroelectric thin film by light ion bombardment. Science, 376(6594), Article 376. https://doi.org/10.1126/science.abk3195

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title = "Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment",

abstract = "Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.",

author = "Seunghun Kang and Jang, \{Woo Sung\} and Morozovska, \{Anna N.\} and Owoong Kwon and Yeongrok Jin and Kim, \{Young Hoon\} and Hagyoul Bae and Chenxi Wang and Yang, \{Sang Hyeok\} and Alex Belianinov and Steven Randolph and Eliseev, \{Eugene A.\} and Liam Collins and Yeehyun Park and Sanghyun Jo and Jung, \{Min Hyoung\} and Go, \{Kyoung June\} and Cho, \{Hae Won\} and Choi, \{Si Young\} and Jang, \{Jae Hyuck\} and Sunkook Kim and Jeong, \{Hu Young\} and Jaekwang Lee and Ovchinnikova, \{Olga S.\} and Jinseong Heo and Kalinin, \{Sergei V.\} and Kim, \{Young Min\} and Yunseok Kim",

note = "Publisher Copyright: {\textcopyright} 2022 The Authors",

year = "2022",

month = may,

day = "13",

doi = "10.1126/science.abk3195",

language = "English",

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journal = "Science",

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Kang, S, Jang, WS, Morozovska, AN, Kwon, O, Jin, Y, Kim, YH, Bae, H, Wang, C, Yang, SH, Belianinov, A, Randolph, S, Eliseev, EA, Collins, L, Park, Y, Jo, S, Jung, MH, Go, KJ, Cho, HW, Choi, SY, Jang, JH, Kim, S, Jeong, HY, Lee, J, Ovchinnikova, OS, Heo, J, Kalinin, SV, Kim, YM & Kim, Y 2022, 'Highly enhanced ferroelectricity in HfO₂-based ferroelectric thin film by light ion bombardment', Science, vol. 376, no. 6594, 376. https://doi.org/10.1126/science.abk3195

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AU - Kang, Seunghun

AU - Jang, Woo Sung

AU - Morozovska, Anna N.

AU - Kwon, Owoong

AU - Jin, Yeongrok

AU - Kim, Young Hoon

AU - Bae, Hagyoul

AU - Wang, Chenxi

AU - Yang, Sang Hyeok

AU - Belianinov, Alex

AU - Randolph, Steven

AU - Eliseev, Eugene A.

AU - Collins, Liam

AU - Park, Yeehyun

AU - Jo, Sanghyun

AU - Jung, Min Hyoung

AU - Go, Kyoung June

AU - Cho, Hae Won

AU - Choi, Si Young

AU - Jang, Jae Hyuck

AU - Kim, Sunkook

AU - Jeong, Hu Young

AU - Lee, Jaekwang

AU - Ovchinnikova, Olga S.

AU - Heo, Jinseong

AU - Kalinin, Sergei V.

AU - Kim, Young Min

AU - Kim, Yunseok

PY - 2022/5/13

Y1 - 2022/5/13

N2 - Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

AB - Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

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VL - 376

JO - Science

JF - Science

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M1 - 376

ER -

Highly enhanced ferroelectricity in HfO₂-based ferroelectric thin film by light ion bombardment

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