High-throughput growth temperature optimization of ferroelectric Sr xBa 1-xNb 2O 6 epitaxial thin films using a temperature gradient method

I. Ohkubo, H. M. Christen, Sergei V. Kalinin, G. E. Jellison, C. M. Rouleau, D. H. Lowndes

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

The multisample film growth method on temperature-gradient substrate to optimize ferroelectric Sr xBa 1-xNb 2O 6 epitaxial thin films was investigated. The ellipsometry and piezoelectric force microscopy (PFM) determined the optimal growth temperature for thin films on MgO(001) substrates to be 750°C. The variations in optical properties and ferroelectric domain structures were observed as function of growth temperature. The results from PFM show formation of uniform ferroelectric film for deposition temperatures above 750°C.

Original languageEnglish
Pages (from-to)1350-1352
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number8
DOIs
StatePublished - Feb 23 2004

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