High-temperature silicon carbide and silicon on insulator based integrated power modules

A. Lostetter; J. Hornberger; B. Mcpherson; B. Reese; R. Shaw; M. Schupbach; B. Rowden; A. Mantooth; J. Balda; T. Otsuka; K. Okumura; M. Miura

doi:10.1109/VPPC.2009.5289735

High-temperature silicon carbide and silicon on insulator based integrated power modules

A. Lostetter, J. Hornberger, B. Mcpherson, B. Reese, R. Shaw, M. Schupbach, B. Rowden, A. Mantooth, J. Balda, T. Otsuka, K. Okumura, M. Miura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

48 Scopus citations

Abstract

This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250 °C. The power module was tested up to 300 V bus voltage, 160 A peak current, and 250 °C junction temperature.

Original language	English
Title of host publication	5th IEEE Vehicle Power and Propulsion Conference, VPPC '09
Pages	1032-1035
Number of pages	4
DOIs	https://doi.org/10.1109/VPPC.2009.5289735
State	Published - 2009
Externally published	Yes
Event	5th IEEE Vehicle Power and Propulsion Conference, VPPC '09 - Dearborn, MI, United States Duration: Sep 7 2009 → Sep 10 2009

Publication series

Name	5th IEEE Vehicle Power and Propulsion Conference, VPPC '09

Conference

Conference	5th IEEE Vehicle Power and Propulsion Conference, VPPC '09
Country/Territory	United States
City	Dearborn, MI
Period	09/7/09 → 09/10/09

Keywords

High temperature
SiC
Silicon carbide

Access to Document

10.1109/VPPC.2009.5289735

Cite this

Lostetter, A., Hornberger, J., Mcpherson, B., Reese, B., Shaw, R., Schupbach, M., Rowden, B., Mantooth, A., Balda, J., Otsuka, T., Okumura, K., & Miura, M. (2009). High-temperature silicon carbide and silicon on insulator based integrated power modules. In 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09 (pp. 1032-1035). Article 5289735 (5th IEEE Vehicle Power and Propulsion Conference, VPPC '09). https://doi.org/10.1109/VPPC.2009.5289735

@inproceedings{68ff8b9562ab49d5bc5c41b391073232,

title = "High-temperature silicon carbide and silicon on insulator based integrated power modules",

abstract = "This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250 °C. The power module was tested up to 300 V bus voltage, 160 A peak current, and 250 °C junction temperature.",

keywords = "High temperature, SiC, Silicon carbide",

author = "A. Lostetter and J. Hornberger and B. Mcpherson and B. Reese and R. Shaw and M. Schupbach and B. Rowden and A. Mantooth and J. Balda and T. Otsuka and K. Okumura and M. Miura",

year = "2009",

doi = "10.1109/VPPC.2009.5289735",

language = "English",

isbn = "9781424426003",

series = "5th IEEE Vehicle Power and Propulsion Conference, VPPC '09",

pages = "1032--1035",

booktitle = "5th IEEE Vehicle Power and Propulsion Conference, VPPC '09",

note = "5th IEEE Vehicle Power and Propulsion Conference, VPPC '09 ; Conference date: 07-09-2009 Through 10-09-2009",

}

Lostetter, A, Hornberger, J, Mcpherson, B, Reese, B, Shaw, R, Schupbach, M, Rowden, B, Mantooth, A, Balda, J, Otsuka, T, Okumura, K & Miura, M 2009, High-temperature silicon carbide and silicon on insulator based integrated power modules. in 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09., 5289735, 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09, pp. 1032-1035, 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09, Dearborn, MI, United States, 09/7/09. https://doi.org/10.1109/VPPC.2009.5289735

High-temperature silicon carbide and silicon on insulator based integrated power modules. / Lostetter, A.; Hornberger, J.; Mcpherson, B. et al.
5th IEEE Vehicle Power and Propulsion Conference, VPPC '09. 2009. p. 1032-1035 5289735 (5th IEEE Vehicle Power and Propulsion Conference, VPPC '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-temperature silicon carbide and silicon on insulator based integrated power modules

AU - Lostetter, A.

AU - Hornberger, J.

AU - Mcpherson, B.

AU - Reese, B.

AU - Shaw, R.

AU - Schupbach, M.

AU - Rowden, B.

AU - Mantooth, A.

AU - Balda, J.

AU - Otsuka, T.

AU - Okumura, K.

AU - Miura, M.

PY - 2009

Y1 - 2009

N2 - This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250 °C. The power module was tested up to 300 V bus voltage, 160 A peak current, and 250 °C junction temperature.

AB - This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250 °C. The power module was tested up to 300 V bus voltage, 160 A peak current, and 250 °C junction temperature.

KW - High temperature

KW - SiC

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=72149112455&partnerID=8YFLogxK

U2 - 10.1109/VPPC.2009.5289735

DO - 10.1109/VPPC.2009.5289735

M3 - Conference contribution

AN - SCOPUS:72149112455

SN - 9781424426003

T3 - 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09

SP - 1032

EP - 1035

BT - 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09

T2 - 5th IEEE Vehicle Power and Propulsion Conference, VPPC '09

Y2 - 7 September 2009 through 10 September 2009

ER -

High-temperature silicon carbide and silicon on insulator based integrated power modules

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Publication series

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Keywords

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