High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Bret Whitaker; Zach Cole; Brandon Passmore; Daniel Martin; Ty McNutt; Alex Lostetter; M. Nance Ericson; S. Shane Frank; Charles L. Britton; Laura D. Marlino; Alan Mantooth; Matt Francis; Ranjan Lamichhane; Paul Shepherd; Michael Glover

doi:10.1109/WiPDA.2014.6964620

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Bret Whitaker, Zach Cole, Brandon Passmore, Daniel Martin, Ty McNutt, Alex Lostetter, M. Nance Ericson, S. Shane Frank, Charles L. Britton, Laura D. Marlino, Alan Mantooth, Matt Francis, Ranjan Lamichhane, Paul Shepherd, Michael Glover

Sensors and Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

25 Scopus citations

Abstract

This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high-frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter's switching frequency was then increased to 500 kHz to prove the high-frequency capability of the power module. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

Original language	English
Title of host publication	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	36-40
Number of pages	5
ISBN (Electronic)	9781479954933
DOIs	https://doi.org/10.1109/WiPDA.2014.6964620
State	Published - Nov 20 2014
Event	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States Duration: Oct 13 2014 → Oct 15 2014

Publication series

Name	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Country/Territory	United States
City	Knoxville
Period	10/13/14 → 10/15/14

Keywords

Power Electronics
Power Module
Silicon Carbide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/WiPDA.2014.6964620

Cite this

Whitaker, B., Cole, Z., Passmore, B., Martin, D., McNutt, T., Lostetter, A., Ericson, M. N., Frank, S. S., Britton, C. L., Marlino, L. D., Mantooth, A., Francis, M., Lamichhane, R., Shepherd, P., & Glover, M. (2014). High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 36-40). Article 6964620 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964620

Whitaker, Bret ; Cole, Zach ; Passmore, Brandon et al. / High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications. 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 36-40 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

@inproceedings{a8e6b36fb792485fb092b24b23e30bf0,

title = "High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications",

abstract = "This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high-frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter's switching frequency was then increased to 500 kHz to prove the high-frequency capability of the power module. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.",

keywords = "Power Electronics, Power Module, Silicon Carbide",

author = "Bret Whitaker and Zach Cole and Brandon Passmore and Daniel Martin and Ty McNutt and Alex Lostetter and Ericson, {M. Nance} and Frank, {S. Shane} and Britton, {Charles L.} and Marlino, {Laura D.} and Alan Mantooth and Matt Francis and Ranjan Lamichhane and Paul Shepherd and Michael Glover",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 ; Conference date: 13-10-2014 Through 15-10-2014",

year = "2014",

month = nov,

day = "20",

doi = "10.1109/WiPDA.2014.6964620",

language = "English",

series = "2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "36--40",

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Whitaker, B, Cole, Z, Passmore, B, Martin, D, McNutt, T, Lostetter, A, Ericson, MN , Frank, SS , Britton, CL, Marlino, LD, Mantooth, A, Francis, M, Lamichhane, R, Shepherd, P & Glover, M 2014, High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications. in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014., 6964620, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Institute of Electrical and Electronics Engineers Inc., pp. 36-40, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Knoxville, United States, 10/13/14. https://doi.org/10.1109/WiPDA.2014.6964620

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications. / Whitaker, Bret; Cole, Zach; Passmore, Brandon et al.
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 36-40 6964620 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

AU - Whitaker, Bret

AU - Cole, Zach

AU - Passmore, Brandon

AU - Martin, Daniel

AU - McNutt, Ty

AU - Lostetter, Alex

AU - Ericson, M. Nance

AU - Frank, S. Shane

AU - Britton, Charles L.

AU - Marlino, Laura D.

AU - Mantooth, Alan

AU - Francis, Matt

AU - Lamichhane, Ranjan

AU - Shepherd, Paul

AU - Glover, Michael

PY - 2014/11/20

Y1 - 2014/11/20

N2 - This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high-frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter's switching frequency was then increased to 500 kHz to prove the high-frequency capability of the power module. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

AB - This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high-frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter's switching frequency was then increased to 500 kHz to prove the high-frequency capability of the power module. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

KW - Power Electronics

KW - Power Module

KW - Silicon Carbide

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U2 - 10.1109/WiPDA.2014.6964620

DO - 10.1109/WiPDA.2014.6964620

M3 - Conference contribution

AN - SCOPUS:84918516344

T3 - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

SP - 36

EP - 40

BT - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Y2 - 13 October 2014 through 15 October 2014

ER -

Whitaker B, Cole Z, Passmore B, Martin D, McNutt T, Lostetter A et al. High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 36-40. 6964620. (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). doi: 10.1109/WiPDA.2014.6964620

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Abstract

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Conference

Keywords

UN SDGs

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