High temperature power electronics - Application Issues of SiC devices

Madhu Chinthavali; Leon M. Tolbert; Burak Ozpineci; Hui Zhang

High temperature power electronics - Application Issues of SiC devices

Madhu Chinthavali, Leon M. Tolbert, Burak Ozpineci, Hui Zhang

Buildings and Transportation Science Div

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. In this paper, thermal behavior of SiC devices in a buck converter configuration and characterization of several SiC devices will be presented.

Original language	English
Pages	407-412
Number of pages	6
State	Published - 2006
Event	IMAPS High Temperature Electronics Conference, HiTEC 2006 - Santa Fe, NM, United States Duration: May 15 2006 → May 15 2006

Conference

Conference	IMAPS High Temperature Electronics Conference, HiTEC 2006
Country/Territory	United States
City	Santa Fe, NM
Period	05/15/06 → 05/15/06

Cite this

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title = "High temperature power electronics - Application Issues of SiC devices",

abstract = "High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. In this paper, thermal behavior of SiC devices in a buck converter configuration and characterization of several SiC devices will be presented.",

author = "Madhu Chinthavali and Tolbert, {Leon M.} and Burak Ozpineci and Hui Zhang",

year = "2006",

language = "English",

pages = "407--412",

note = "IMAPS High Temperature Electronics Conference, HiTEC 2006 ; Conference date: 15-05-2006 Through 15-05-2006",

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TY - CONF

T1 - High temperature power electronics - Application Issues of SiC devices

AU - Chinthavali, Madhu

AU - Tolbert, Leon M.

AU - Ozpineci, Burak

AU - Zhang, Hui

PY - 2006

Y1 - 2006

N2 - High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. In this paper, thermal behavior of SiC devices in a buck converter configuration and characterization of several SiC devices will be presented.

AB - High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. In this paper, thermal behavior of SiC devices in a buck converter configuration and characterization of several SiC devices will be presented.

UR - http://www.scopus.com/inward/record.url?scp=84880057545&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84880057545

SP - 407

EP - 412

T2 - IMAPS High Temperature Electronics Conference, HiTEC 2006

Y2 - 15 May 2006 through 15 May 2006

ER -

High temperature power electronics - Application Issues of SiC devices

Abstract

Conference

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