High Temperature DC Characterization of Fully-Depleted 0.5μm SOS-CMOS MOSFETs for Analog Circuit Design

M. N. Ericson; C. L. Britton; J. M. Rochelle; B. J. Blalock; B. D. Williamson; R. L. Greenwell; R. Schultz

High Temperature DC Characterization of Fully-Depleted 0.5μm SOS-CMOS MOSFETs for Analog Circuit Design

M. N. Ericson, C. L. Britton, J. M. Rochelle, B. J. Blalock, B. D. Williamson, R. L. Greenwell, R. Schultz

Sensors and Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

Extensive characterization results of MOSFET small-signal parameters over temperature (25° to 300°C) are presented for low-V_T transistors fabricated in a SOS 0.5-μm process. Low-V_T devices such as these are particularly useful for low-voltage, low-power (LVLP) analog applications. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g_m/I _d), output resistance (r_ds), and threshold voltage (V _T). These parameters are summarized as a function of both gate length (0.5μm to 16μm) and temperature. Inversion coefficient representation is employed for data presentation and analysis. This work provides the most thorough presentation of SOS MOSFET dc parameters as a function of both gate length and temperature to date. In addition, this work summarizes device information essential for successful high-temperature SOS-CMOS analog circuit design.

Original language	English
Pages	89-91
Number of pages	3
State	Published - 2003
Event	2003 IEEE International SOI Conference Proceedings - Newport Beach, CA, United States Duration: Sep 29 2003 → Oct 2 2003

Conference

Conference	2003 IEEE International SOI Conference Proceedings
Country/Territory	United States
City	Newport Beach, CA
Period	09/29/03 → 10/2/03

Cite this

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title = "High Temperature DC Characterization of Fully-Depleted 0.5μm SOS-CMOS MOSFETs for Analog Circuit Design",

abstract = "Extensive characterization results of MOSFET small-signal parameters over temperature (25° to 300°C) are presented for low-VT transistors fabricated in a SOS 0.5-μm process. Low-VT devices such as these are particularly useful for low-voltage, low-power (LVLP) analog applications. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (gm/I d), output resistance (rds), and threshold voltage (V T). These parameters are summarized as a function of both gate length (0.5μm to 16μm) and temperature. Inversion coefficient representation is employed for data presentation and analysis. This work provides the most thorough presentation of SOS MOSFET dc parameters as a function of both gate length and temperature to date. In addition, this work summarizes device information essential for successful high-temperature SOS-CMOS analog circuit design.",

author = "Ericson, {M. N.} and Britton, {C. L.} and Rochelle, {J. M.} and Blalock, {B. J.} and Williamson, {B. D.} and Greenwell, {R. L.} and R. Schultz",

year = "2003",

language = "English",

pages = "89--91",

note = "2003 IEEE International SOI Conference Proceedings ; Conference date: 29-09-2003 Through 02-10-2003",

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TY - CONF

T1 - High Temperature DC Characterization of Fully-Depleted 0.5μm SOS-CMOS MOSFETs for Analog Circuit Design

AU - Ericson, M. N.

AU - Britton, C. L.

AU - Rochelle, J. M.

AU - Blalock, B. J.

AU - Williamson, B. D.

AU - Greenwell, R. L.

AU - Schultz, R.

PY - 2003

Y1 - 2003

N2 - Extensive characterization results of MOSFET small-signal parameters over temperature (25° to 300°C) are presented for low-VT transistors fabricated in a SOS 0.5-μm process. Low-VT devices such as these are particularly useful for low-voltage, low-power (LVLP) analog applications. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (gm/I d), output resistance (rds), and threshold voltage (V T). These parameters are summarized as a function of both gate length (0.5μm to 16μm) and temperature. Inversion coefficient representation is employed for data presentation and analysis. This work provides the most thorough presentation of SOS MOSFET dc parameters as a function of both gate length and temperature to date. In addition, this work summarizes device information essential for successful high-temperature SOS-CMOS analog circuit design.

AB - Extensive characterization results of MOSFET small-signal parameters over temperature (25° to 300°C) are presented for low-VT transistors fabricated in a SOS 0.5-μm process. Low-VT devices such as these are particularly useful for low-voltage, low-power (LVLP) analog applications. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (gm/I d), output resistance (rds), and threshold voltage (V T). These parameters are summarized as a function of both gate length (0.5μm to 16μm) and temperature. Inversion coefficient representation is employed for data presentation and analysis. This work provides the most thorough presentation of SOS MOSFET dc parameters as a function of both gate length and temperature to date. In addition, this work summarizes device information essential for successful high-temperature SOS-CMOS analog circuit design.

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M3 - Paper

AN - SCOPUS:0142217035

SP - 89

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T2 - 2003 IEEE International SOI Conference Proceedings

Y2 - 29 September 2003 through 2 October 2003

ER -

High Temperature DC Characterization of Fully-Depleted 0.5μm SOS-CMOS MOSFETs for Analog Circuit Design

Abstract

Conference

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