High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

Madhu Sudhan Chinthavali; Burak Ozpineci; Leon M. Tolbert

doi:10.1109/APEC.2005.1452945

High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

Madhu Sudhan Chinthavali, Burak Ozpineci, Leon M. Tolbert

Buildings and Transportation Science Div

Research output: Contribution to conference › Paper › peer-review

34 Scopus citations

Abstract

Silicon carbide (SiC) unipolar devices have much higher breakdown voltages because of the ten times greater electric field strength of SiC compared with silicon (Si). 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. Four commercially available SiC Schottky diodes at different voltage and current ratings, an experimental VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

Original language	English
Pages	322-328
Number of pages	7
DOIs	https://doi.org/10.1109/APEC.2005.1452945
State	Published - 2005
Event	20th Annual IEEEApplied Power ElectronicsConference and Exposition, APEC 2005 - Austin, TX, United States Duration: Mar 6 2005 → Mar 10 2005

Conference

Conference	20th Annual IEEEApplied Power ElectronicsConference and Exposition, APEC 2005
Country/Territory	United States
City	Austin, TX
Period	03/6/05 → 03/10/05

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10.1109/APEC.2005.1452945

Cite this

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title = "High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices",

abstract = "Silicon carbide (SiC) unipolar devices have much higher breakdown voltages because of the ten times greater electric field strength of SiC compared with silicon (Si). 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. Four commercially available SiC Schottky diodes at different voltage and current ratings, an experimental VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.",

author = "Chinthavali, {Madhu Sudhan} and Burak Ozpineci and Tolbert, {Leon M.}",

year = "2005",

doi = "10.1109/APEC.2005.1452945",

language = "English",

pages = "322--328",

note = "20th Annual IEEEApplied Power ElectronicsConference and Exposition, APEC 2005 ; Conference date: 06-03-2005 Through 10-03-2005",

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T1 - High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

AU - Chinthavali, Madhu Sudhan

AU - Ozpineci, Burak

AU - Tolbert, Leon M.

PY - 2005

Y1 - 2005

N2 - Silicon carbide (SiC) unipolar devices have much higher breakdown voltages because of the ten times greater electric field strength of SiC compared with silicon (Si). 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. Four commercially available SiC Schottky diodes at different voltage and current ratings, an experimental VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

AB - Silicon carbide (SiC) unipolar devices have much higher breakdown voltages because of the ten times greater electric field strength of SiC compared with silicon (Si). 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. Four commercially available SiC Schottky diodes at different voltage and current ratings, an experimental VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

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U2 - 10.1109/APEC.2005.1452945

DO - 10.1109/APEC.2005.1452945

M3 - Paper

AN - SCOPUS:33744984141

SP - 322

EP - 328

T2 - 20th Annual IEEEApplied Power ElectronicsConference and Exposition, APEC 2005

Y2 - 6 March 2005 through 10 March 2005

ER -

High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

Abstract

Conference

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