TY - GEN
T1 - High temperature (250 °C) silicon carbide power modules with integrated gate drive boards
AU - Reese, B.
AU - McPherson, B.
AU - Shaw, R.
AU - Hornberger, J.
AU - Schupbach, R.
AU - Lostetter, A.
AU - Rowden, B.
AU - Mantooth, A.
AU - Ang, S.
AU - Balda, J.
AU - Okumura, K.
AU - Otsuka, T.
PY - 2010
Y1 - 2010
N2 - Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.
AB - Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.
KW - High-temperature electronics
KW - High-temperature packaging
KW - Silicon carbide (SiC)
KW - Silicon on insulator (SOI)
UR - http://www.scopus.com/inward/record.url?scp=80052099773&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:80052099773
SN - 9781622769780
T3 - International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010
SP - 297
EP - 304
BT - International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010
T2 - IMAPS High Temperature Electronics Conference, HiTEC 2010
Y2 - 11 May 2010 through 13 May 2010
ER -