High-Speed Optical Response of Pseudomorphic In GaAs High Electron Mobility Transistors

M. Z. Martin, F. K. Oshita, H. R. Fetterman

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17 Scopus citations

Abstract

Optical response of very high-frequency pseudomorphic In GaAs HEMT's with fT of 140 GHz has been successfully performed. These measurements were done using the picosecond time domain optoelectronic technique at room and low temperatures. The optical photovoltaic responses of these HEMT's show FWHM of 8.4 and 7.5 ps at room temperature and 20 K, respectively. Photoconductive responsivity as high as 4 A/W with an external quantum efficiency of > 600% is reported here.

Original languageEnglish
Pages (from-to)1012-1014
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number9
DOIs
StatePublished - Sep 1992
Externally publishedYes

Funding

Manuscript received March 13, 1992; revised June 8, 1992. This work was supported by the Air Force Office of Scientific Research under the direction of H. R. Schlossberg and by the National Center for Integrated Photonic Technology. M. Z. Martin, F. K. Oshita, and H. R. Fetterman are with the Department of Electrical Engineering, University of California, Los Angeles, CA 90024. M. Matloubian was with the Department of Electrical Engineering, University of California, Los Angeles, CA 90024. He is now with Hughes Research Laboratories, Malibu, CA 90265. L. Shaw and K. L. Tan are with the Electronics and Technology Division, TRW, Redondo Beach, CA 90278. IEEE Log Number 9202470.

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