High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-δ/Si heterojunction

Juan Wen; Haizhong Guo; Jie Xing; Huibin Lü; Kui Juan Jin; Meng He; Guozhen Yang

doi:10.1007/s11433-010-4141-8

High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO_3-δ/Si heterojunction

Juan Wen, Haizhong Guo, Jie Xing, Huibin Lü, Kui Juan Jin, Meng He, Guozhen Yang

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO_3-δ and p-type Si fabricated by laser molecular beam epitaxy. The responsivity of open-circuit photovoltage can reach 10⁴ V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order. We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO _3-δ/Si heterojunction. From the experimental results, some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.

Original language	English
Pages (from-to)	2080-2083
Number of pages	4
Journal	Science China: Physics, Mechanics and Astronomy
Volume	53
Issue number	11
DOIs	https://doi.org/10.1007/s11433-010-4141-8
State	Published - Nov 2010
Externally published	Yes

Funding

This work was supported by the National Basic Research Program of China (Grant No. 2007CB935700) and the National Natural Science Foundation of China (Grant No. 50672120).

Keywords

Interfacial photoelectric effect
Photovoltage
SrTiO/Si heterojunction

Access to Document

10.1007/s11433-010-4141-8

Cite this

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title = "High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-δ/Si heterojunction",

abstract = "A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO3-δ and p-type Si fabricated by laser molecular beam epitaxy. The responsivity of open-circuit photovoltage can reach 104 V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order. We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO 3-δ/Si heterojunction. From the experimental results, some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.",

keywords = "Interfacial photoelectric effect, Photovoltage, SrTiO/Si heterojunction",

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T1 - High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-δ/Si heterojunction

AU - Wen, Juan

AU - Guo, Haizhong

AU - Xing, Jie

AU - Lü, Huibin

AU - Jin, Kui Juan

AU - He, Meng

AU - Yang, Guozhen

PY - 2010/11

Y1 - 2010/11

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AB - A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO3-δ and p-type Si fabricated by laser molecular beam epitaxy. The responsivity of open-circuit photovoltage can reach 104 V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order. We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO 3-δ/Si heterojunction. From the experimental results, some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.

KW - Interfacial photoelectric effect

KW - Photovoltage

KW - SrTiO/Si heterojunction

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