Abstract
The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.
| Original language | English |
|---|---|
| Pages (from-to) | 1297-1300 |
| Number of pages | 4 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 137-138 |
| Issue number | PART 2 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |