High resolution optical recording on a-Si films

V. Z. Gotchiyaev; V. P. Korolkov; A. P. Sokolov; V. P. Chernukhin

doi:10.1016/S0022-3093(05)80361-8

High resolution optical recording on a-Si films

V. Z. Gotchiyaev, V. P. Korolkov, A. P. Sokolov, V. P. Chernukhin

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Abstract

The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.

Original language	English
Pages (from-to)	1297-1300
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(05)80361-8
State	Published - 1991
Externally published	Yes

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abstract = "The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.",

author = "Gotchiyaev, {V. Z.} and Korolkov, {V. P.} and Sokolov, {A. P.} and Chernukhin, {V. P.}",

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AU - Gotchiyaev, V. Z.

AU - Korolkov, V. P.

AU - Sokolov, A. P.

AU - Chernukhin, V. P.

PY - 1991

Y1 - 1991

N2 - The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.

AB - The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.

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U2 - 10.1016/S0022-3093(05)80361-8

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AN - SCOPUS:0010270644

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

High resolution optical recording on a-Si films

Abstract

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