High rectification and photovoltaic effect in oxide nano-junctions

T. Choi; L. Jiang; S. Lee; T. Egami; H. N. Lee

doi:10.1088/1367-2630/14/9/093056

High rectification and photovoltaic effect in oxide nano-junctions

T. Choi, L. Jiang, S. Lee, T. Egami, H. N. Lee

Materials Science and Technology Div

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Polar oxide-based heterostructures composed of ferroelectric PbZr _0.2Ti _0.8O ₃ and hole-doped La _0.8Sr _0.2MnO ₃ ultrathin epitaxial films were fabricated on Nb: SrTiO ₃ substrates to check the viability of all oxide-based photovoltaic (PV) nano-junctions. We observed clear diode-like behavior, yielding a rectification ratio up to ∼1000. This large enhancement could be attributed to the presence of an ultrathin ferroelectric layer (<10 nm) that greatly contributed to the improved PV performance by promoting carrier separation, as compared with oxide junctions without the ferroelectric layer. Therefore, our results provide useful information for developing highly efficient ferroelectric oxide-based PV devices.

Original language	English
Article number	093056
Journal	New Journal of Physics
Volume	14
DOIs	https://doi.org/10.1088/1367-2630/14/9/093056
State	Published - Sep 2012

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title = "High rectification and photovoltaic effect in oxide nano-junctions",

abstract = "Polar oxide-based heterostructures composed of ferroelectric PbZr 0.2Ti 0.8O 3 and hole-doped La 0.8Sr 0.2MnO 3 ultrathin epitaxial films were fabricated on Nb: SrTiO 3 substrates to check the viability of all oxide-based photovoltaic (PV) nano-junctions. We observed clear diode-like behavior, yielding a rectification ratio up to ∼1000. This large enhancement could be attributed to the presence of an ultrathin ferroelectric layer (<10 nm) that greatly contributed to the improved PV performance by promoting carrier separation, as compared with oxide junctions without the ferroelectric layer. Therefore, our results provide useful information for developing highly efficient ferroelectric oxide-based PV devices.",

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T1 - High rectification and photovoltaic effect in oxide nano-junctions

AU - Choi, T.

AU - Jiang, L.

AU - Lee, S.

AU - Egami, T.

AU - Lee, H. N.

PY - 2012/9

Y1 - 2012/9

N2 - Polar oxide-based heterostructures composed of ferroelectric PbZr 0.2Ti 0.8O 3 and hole-doped La 0.8Sr 0.2MnO 3 ultrathin epitaxial films were fabricated on Nb: SrTiO 3 substrates to check the viability of all oxide-based photovoltaic (PV) nano-junctions. We observed clear diode-like behavior, yielding a rectification ratio up to ∼1000. This large enhancement could be attributed to the presence of an ultrathin ferroelectric layer (<10 nm) that greatly contributed to the improved PV performance by promoting carrier separation, as compared with oxide junctions without the ferroelectric layer. Therefore, our results provide useful information for developing highly efficient ferroelectric oxide-based PV devices.

AB - Polar oxide-based heterostructures composed of ferroelectric PbZr 0.2Ti 0.8O 3 and hole-doped La 0.8Sr 0.2MnO 3 ultrathin epitaxial films were fabricated on Nb: SrTiO 3 substrates to check the viability of all oxide-based photovoltaic (PV) nano-junctions. We observed clear diode-like behavior, yielding a rectification ratio up to ∼1000. This large enhancement could be attributed to the presence of an ultrathin ferroelectric layer (<10 nm) that greatly contributed to the improved PV performance by promoting carrier separation, as compared with oxide junctions without the ferroelectric layer. Therefore, our results provide useful information for developing highly efficient ferroelectric oxide-based PV devices.

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DO - 10.1088/1367-2630/14/9/093056

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SN - 1367-2630

VL - 14

JO - New Journal of Physics

JF - New Journal of Physics

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ER -

High rectification and photovoltaic effect in oxide nano-junctions

Abstract

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