High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter

Yan Zhang; Yongqiang Ning; Li Qin; Ye Wang; Jinjiang Cui; Guangyu Liu; Xing Zhang; Zhenfu Wang; Yanfang Sun; Yun Liu; Lijun Wang

doi:10.1364/AO.49.003793

High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter

Yan Zhang
, Yongqiang Ning
, Li Qin
, Ye Wang
, Jinjiang Cui
, Guangyu Liu
, Xing Zhang
, Zhenfu Wang
, Yanfang Sun
, Yun Liu
, Lijun Wang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600μm diameter VCSEL is suppressed from 30° to 15°, and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2:01W.

Original language	English
Pages (from-to)	3793-3797
Number of pages	5
Journal	Applied Optics
Volume	49
Issue number	19
DOIs	https://doi.org/10.1364/AO.49.003793
State	Published - Jul 1 2010
Externally published	Yes

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10.1364/AO.49.003793

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title = "High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter",

abstract = "A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600μm diameter VCSEL is suppressed from 30° to 15°, and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2:01W.",

author = "Yan Zhang and Yongqiang Ning and Li Qin and Ye Wang and Jinjiang Cui and Guangyu Liu and Xing Zhang and Zhenfu Wang and Yanfang Sun and Yun Liu and Lijun Wang",

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doi = "10.1364/AO.49.003793",

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T1 - High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter

AU - Zhang, Yan

AU - Ning, Yongqiang

AU - Qin, Li

AU - Wang, Ye

AU - Cui, Jinjiang

AU - Liu, Guangyu

AU - Zhang, Xing

AU - Wang, Zhenfu

AU - Sun, Yanfang

AU - Liu, Yun

AU - Wang, Lijun

PY - 2010/7/1

Y1 - 2010/7/1

N2 - A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600μm diameter VCSEL is suppressed from 30° to 15°, and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2:01W.

AB - A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600μm diameter VCSEL is suppressed from 30° to 15°, and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2:01W.

UR - https://www.scopus.com/pages/publications/77955944475

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DO - 10.1364/AO.49.003793

M3 - Article

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VL - 49

SP - 3793

EP - 3797

JO - Applied Optics

JF - Applied Optics

IS - 19

ER -

High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter

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