High-power phosphor-free InGaN/AlGaN dot-in-A-wire core-shell white light-emitting diodes

Hieu P.T. Nguyen, Mehrdad Djavid, Steffi Y. Woo, Xianhe Liu, Qi Wang, Gianluigi A. Botton, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We report on the achievement of relatively high power phosphor-free white light-emitting diodes (LEDs) using a new self-organized InGaN/AlGaN dot-in-A-wire core-shell nanowire heterostructure. Multiple AlGaN shell layers are spontaneously formed during the growth of the quantum dot active region. Due to the drastically reduced nonradiative surface recombination, such core-shell nanowire structures exhibit significantly increased carrier lifetime (from ∼ 0.3ns to ∼ 4.5ns) and massively enhanced photoluminescence intensity. Strong white-light emission was recorded for the unpackaged core-shell nanowire LEDs with an output power of >5 mW, measured under an injection current ∼ 60A/cm2, with a color rendering index of ∼ 95.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XIX
EditorsKlaus P. Streubel, Heonsu Jeon, Li-Wei Tu, Martin Strassburg
PublisherSPIE
ISBN (Electronic)9781628414738
DOIs
StatePublished - 2015
Externally publishedYes
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX - San Francisco, United States
Duration: Feb 10 2015Feb 12 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9383
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
Country/TerritoryUnited States
CitySan Francisco
Period02/10/1502/12/15

Keywords

  • and gallium nitride
  • light emitting diodes
  • molecular beam epitaxy
  • nanowire

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