High power output and temperature characteristics of 1.06μm diode array module

Shun Yao; Getao Tao; Guoguang Lu; Yun Liu; Biao Zhang; Di Yao; Lijun Wang

doi:10.1117/12.667132

High power output and temperature characteristics of 1.06μm diode array module

Shun Yao, Getao Tao, Guoguang Lu, Yun Liu, Biao Zhang, Di Yao, Lijun Wang

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20°C to 40°C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20°C. The central wavelength is 1059.4nm.

Original language	English
Article number	60280G
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6028
DOIs	https://doi.org/10.1117/12.667132
State	Published - 2005
Event	ICO20: Lasers and Laser Technologies - Changchun, China Duration: Aug 21 2005 → Aug 26 2005

Keywords

1.06μm
Characteristic temperature
Diode array
High power

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10.1117/12.667132

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title = "High power output and temperature characteristics of 1.06μm diode array module",

abstract = "In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20°C to 40°C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20°C. The central wavelength is 1059.4nm.",

keywords = "1.06μm, Characteristic temperature, Diode array, High power",

author = "Shun Yao and Getao Tao and Guoguang Lu and Yun Liu and Biao Zhang and Di Yao and Lijun Wang",

year = "2005",

doi = "10.1117/12.667132",

language = "English",

volume = "6028",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "ICO20: Lasers and Laser Technologies ; Conference date: 21-08-2005 Through 26-08-2005",

}

TY - JOUR

T1 - High power output and temperature characteristics of 1.06μm diode array module

AU - Yao, Shun

AU - Tao, Getao

AU - Lu, Guoguang

AU - Liu, Yun

AU - Zhang, Biao

AU - Yao, Di

AU - Wang, Lijun

PY - 2005

Y1 - 2005

N2 - In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20°C to 40°C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20°C. The central wavelength is 1059.4nm.

AB - In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20°C to 40°C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20°C. The central wavelength is 1059.4nm.

KW - 1.06μm

KW - Characteristic temperature

KW - Diode array

KW - High power

UR - http://www.scopus.com/inward/record.url?scp=33645011383&partnerID=8YFLogxK

U2 - 10.1117/12.667132

DO - 10.1117/12.667132

M3 - Conference article

AN - SCOPUS:33645011383

SN - 0277-786X

VL - 6028

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 60280G

T2 - ICO20: Lasers and Laser Technologies

Y2 - 21 August 2005 through 26 August 2005

ER -

High power output and temperature characteristics of 1.06μm diode array module

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